The EBIC contrast of dislocation slip planes in silicon

Аристов, В. В.; Bondarenko, I. E.; Dryomova, N. N.; Kazmiruk, V. V.; Yakimov, E. B.

doi:10.1002/pssa.2210840154

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…Moreover, other point and/or extended defects are formed during plastic deformation near the slip plane swept by the moving dislocation, forming the dislocation trail [3][4][5]. The defects in the trail are electrically active [6][7][8][9] and can strongly affect the macroscopic electrical properties of the crystals. To distinguish between the contributions from different defects, their electrical properties should be studied separately.…”

Section: Introductionmentioning

confidence: 99%

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Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon

Feklisova

Yakimov

Yarykin

et al. 2003

J. Phys.: Condens. Matter

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Electron beam induced current (EBIC) investigations of plastically deformed silicon in the temperature range from 90 K to 300 K were carried out. It is found that the dislocation trails left behind moving dislocations are the main defects revealed by the EBIC in crystals deformed in clean conditions. With an increase of the contamination level, the dislocation contrast in p-type samples increases. It is observed that the EBIC contrasts of both dislocations and dislocation trails increase with cooling in p-type silicon, while in n-type samples the EBIC contrasts exhibit the opposite trends for both defects.

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Section: Introductionmentioning

confidence: 99%

“…Unlike the dislocations, the parameters of the EBIC contrast from dislocation trails have been measured in only a few works [7][8][9]. In particular, the temperature dependence of the trail contrast remains unknown, while such knowledge could clarify the nature of the trails.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon

Feklisova

Yakimov

Yarykin

et al. 2003

J. Phys.: Condens. Matter

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Recombination properties of dislocation slip planes

Bondarenko

Blumtritt²,

Heydenreich³

et al. 1986

phys. stat. sol. (a)

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The recombination efficiency of separate dislocations and crystal areas swept by them is studied by the electron beam induced current (EBIC) method in plastically deformed silicon. It is found that the EBIC‐contrast of slip planes may exceed the contrast of dislocations themselves. Slip plane contrast is observed to depend on beam current. The data obtained may be explained on the assumption that there is an electrostatic barrier closeto the quasi‐two‐dimensional defect, i.e. the dislocation slip plane.

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The EBIC contrast of dislocation slip planes in silicon

Cited by 2 publications

References 7 publications

Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon

Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon

Recombination properties of dislocation slip planes

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