The effect of absorber thickness on the planar Sb2S3 thin film solar cell: Trade-off between light absorption and charge separation

Chen, Zhaowen; Chen, Guodong

doi:10.1016/j.solener.2020.02.074

Cited by 39 publications

(19 citation statements)

References 24 publications

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“…We can find that the MXene‐derived device in our work is the first time to join the club of over 8% efficiency using the noble metal and/or organic‐free BCMs for Sb 2 (S x Se 1− x ) 3 solar cells. [ 10–13,15,56–64 ] This back contact engineering strategy, via the novel, stable, and eco‐friendly BCMs of MXene electrode, enables to achieve a low‐cost and full‐inorganic Sb 2 (S,Se) 3 solar cell with high efficiency.…”

Section: Resultsmentioning

confidence: 99%

High‐Efficiency Sb₂(S,Se)₃ Solar Cells with New Hole Transport Layer‐Free Back Architecture via 2D Titanium‐Carbide Mxene

Lin

Yao

et al. 2021

Adv Funct Materials

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MXene, a class of 2D materials of metal carbide or nitride, has attracted a lot of attention recently due to its excellent optical and electrical properties. In this work, titanium‐carbide MXene (Ti3C2Tx) is introduced as a back electrode in Sb2(S,Se)3 thin‐film solar cells (FTO/CdS/Sb2(S,Se)3/MXene) for the first time, which displaces traditional carbon (C) and gold (Au) electrodes entirely. Impressively, thanks to its high conductivity, mild reflectivity, and flexible flake architecture, the MXene‐based device performance outperforms typical C and Au electrodes by 153% and 77%, respectively. Specifically, the tunable work function of MXene and a beneficial Sb–O bond formed between Sb2(S,Se)3 and MXene efficiently suppress the recombination and enhance charge transport by enjoying the unique merit of the rich terminal groups of MXene. As a result, the best efficiency of 8.29% of MXene‐based Sb2(S,Se)3 solar device is achieved, which represents the highest performance of noble metal and/or hole transport layer‐free derived Sb2(S,Se)3 solar cells to date. This result has revealed that MXene is a feasible material to substitute the back electrode in Sb‐based solar cells to reach high efficiency, low cost, and high stability.

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Section: Resultsmentioning

confidence: 99%

High‐Efficiency Sb₂(S,Se)₃ Solar Cells with New Hole Transport Layer‐Free Back Architecture via 2D Titanium‐Carbide Mxene

Lin

Yao

et al. 2021

Adv Funct Materials

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“…As shown in Figure (a), the best solar cell derived from the optimized Sb 2 Se 3 thin film exhibits a conversion efficiency of 6.09% with a V oc of 412 mV, a J sc of 27.8 mA/cm 2 , and an FF of 53.2%. The efficiency of this device is promising among those of antimony chalcogenide devices with carbon as the electrode, which can be seen in Table . − The device performance of the Sb 2 Se 3 thin film solar cell improved by 47.8% after optimization, which is attributed to the synergetic improvement of V oc , J sc , and FF. The improvement of V oc (from 378 mV to 412 mV) may be attributed to the increased lifetime of carriers resulting from the improved [hk1] orientation. , The increase of the J sc value of the device from 25.42 mA/cm 2 to 27.8 mA/cm 2 may be attributed to the improved [hk1] orientation.…”

Section: Results and Discussionmentioning

confidence: 86%

Remarkable Sb₂Se₃ Solar Cell with a Carbon Electrode by Tailoring Film Growth during the VTD Process

Wang

Cao

et al. 2021

ACS Appl. Energy Mater.

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The vapor transport deposition (VTD) method is regarded as one of the most effective approaches to obtain high-quality Sb2Se3 thin films. However, the orientation and morphology of Sb2Se3 limit the development of Sb2Se3 solar cells. Thus, a method to tailor the surface morphology of Sb2Se3 film growth by VTD is urgently needed. In this work, the growth of the Sb2Se3 thin film and the formation mechanism of Sb2Se3 nanorods appearing on the Sb2Se3 film are carefully studied. Sb2Se3 nanorods with [hk1] orientation and [hk0] orientation are distinguished. By controlling the growth of Sb2Se3 nanorods with [hk1] orientation, the interface defect density is reduced and the quality of the Sb2Se3 thin film is improved. Finally, Sb2Se3 solar cells with the configuration ITO/CdS/Sb2Se3/C/Ag achieve an efficiency of 6.09% with an open circuit voltage (V oc) deficit decreased by 34 mV, wherein over 85% of the efficiency of the Sb2Se3 device remains after replacing the Spiro-OMeTAD/Au structure with a carbon/Ag structure. This value is the champion efficiency for a VTD-processed Sb2Se3 solar cell with a carbon electrode. This work is expected to offer valuable information for the future development of Sb2Se3 or/and other highly anisotropic materials formed by physical vapor deposition.

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“…Overall, the PCEs of ST-Sb 2 S 3 devices have remained relatively low because of the drastic drop in V OC and FF for thinner absorber layers, along with the proportional decrease in J SC. 27,49 In most high-performance devices, gold as the counter electrode is ubiquitous. 20,22,[50][51][52] However, the high cost (~100 USD m -2 ) and the upscaling issue of vacuum deposition raise concerns about the large-scale commercialization of these solar cells.…”

Section: Introductionmentioning

confidence: 99%

CuSCN as a hole transport layer in an inorganic solution-processed planar Sb₂S₃solar cell, enabling carbon-based and semitransparent photovoltaics

2022

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The effect of absorber thickness on the planar Sb2S3 thin film solar cell: Trade-off between light absorption and charge separation

Cited by 39 publications

References 24 publications

High‐Efficiency Sb₂(S,Se)₃ Solar Cells with New Hole Transport Layer‐Free Back Architecture via 2D Titanium‐Carbide Mxene

High‐Efficiency Sb₂(S,Se)₃ Solar Cells with New Hole Transport Layer‐Free Back Architecture via 2D Titanium‐Carbide Mxene

Remarkable Sb₂Se₃ Solar Cell with a Carbon Electrode by Tailoring Film Growth during the VTD Process

CuSCN as a hole transport layer in an inorganic solution-processed planar Sb₂S₃solar cell, enabling carbon-based and semitransparent photovoltaics

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The effect of absorber thickness on the planar Sb2S3 thin film solar cell: Trade-off between light absorption and charge separation

Cited by 39 publications

References 24 publications

High‐Efficiency Sb2(S,Se)3 Solar Cells with New Hole Transport Layer‐Free Back Architecture via 2D Titanium‐Carbide Mxene

High‐Efficiency Sb2(S,Se)3 Solar Cells with New Hole Transport Layer‐Free Back Architecture via 2D Titanium‐Carbide Mxene

Remarkable Sb2Se3 Solar Cell with a Carbon Electrode by Tailoring Film Growth during the VTD Process

CuSCN as a hole transport layer in an inorganic solution-processed planar Sb2S3solar cell, enabling carbon-based and semitransparent photovoltaics

Contact Info

Product

Resources

About

High‐Efficiency Sb₂(S,Se)₃ Solar Cells with New Hole Transport Layer‐Free Back Architecture via 2D Titanium‐Carbide Mxene

High‐Efficiency Sb₂(S,Se)₃ Solar Cells with New Hole Transport Layer‐Free Back Architecture via 2D Titanium‐Carbide Mxene

Remarkable Sb₂Se₃ Solar Cell with a Carbon Electrode by Tailoring Film Growth during the VTD Process

CuSCN as a hole transport layer in an inorganic solution-processed planar Sb₂S₃solar cell, enabling carbon-based and semitransparent photovoltaics