The effect of an excess of components on the electrical properties of indium-antimonide films

Gulyaev, A. M.; Shnitnikov, A. S.

doi:10.1134/s1063782615020098

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2022

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Cited by 2 publications

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“…High-quality epitaxial InSb films on single-crystal substrates are formed by molecular beam epitaxy (Joyce et al, 1989;Zhang et al, 2004). Another way to form InSb films is the three-temperature method (Gulyaev and Shitnikov, 2015). In addition, InSb films are formed by electron beam evaporation (Ivanov and Smirnov, 2015;Rahul et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

Kolesnikova

Углов

Drapezo³

et al. 2022

High Temp Mat Proc

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Section: Introductionmentioning

confidence: 99%

STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

Kolesnikova

Углов

Drapezo³

et al. 2022

High Temp Mat Proc

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Formation of epitaxial InSb films on semi-insulating GaAs(100) by explosive thermal evaporation: their structure and electrical properties

Kolesnikova

Углов

Kuleshov

et al. 2021

Journal of the Belarusian State University. Physics

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In the present work, the influence of the deposition temperature of InSb films on semi-insulating GaAs(100) on their phase composition, crystal perfection and electrical properties was investigated. The InSb films of various extent of crystal perfection are formed by means of explosive thermal deposition of InSb on semi-insulating GaAs(100) substrates in the temperature range of 375–460 °C. X-ray diffraction analysis established that the films are heteroepitaxial. It is shown that an increase in the deposition temperature of InSb films from 375 to 460 °C leads to a change in the film surface roughness (Ra) from 3.4 to 19.1 nm. The Hall voltage sensitivity to the magnetic field of InSb films varies in the range of 500–1500 mV/T. The electron concentration (n) and mobility (μ) changes in the range of 2 ⋅ 1016 – 6 ⋅ 1016 cm–3, 10 ⋅ 103 – 21 ⋅ 103 cm2/(V ⋅ s). The formed InSb films on semi-insulating GaAs(100) substrate are of practical interest for the manufacture of highly sensitive miniature Hall devices.

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The effect of an excess of components on the electrical properties of indium-antimonide films

Cited by 2 publications

References 4 publications

STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

Formation of epitaxial InSb films on semi-insulating GaAs(100) by explosive thermal evaporation: their structure and electrical properties

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