The effect of an external magnetic field, doping, and bias voltage on the thermoelectric and thermodynamic of S-graphene monolayer

Theoretical perspective on the electronic, magnetic and thermodynamic properties of T-graphene: the tight-binding approach

“…is in line with our pervious results for S-graphenethat displayed raising the external magnetic eld increases the Pauli susceptibility of S-graphene 32 .…”

Application of the real space decimation method in determining intricate electronic phases of matter: a review

“…The renormalized lattice is essentially a two-level system with a band structure identical to the original lattice near the Fermi level. Furthermore, a recent study 118 has availed the renormalized Hamiltonian of S-graphene to explore the corresponding thermoelectric and thermodynamic properties. It is fascinating to note that the method is well-equipped to handle external parameters such as the electron or hole doping, external magnetic field, and bias voltage.…”