2006
DOI: 10.1016/j.jnucmat.2006.05.043
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The effect of annealing at 1500°C on migration and release of ion implanted silver in CVD silicon carbide

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Cited by 52 publications
(61 citation statements)
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“…[5], who found at 1500°C a value of D < 5 Â 10 À21 m 2 s À1 . In view of this extremely low limit the diffusion in CVD-SiC can almost entirely be associated with grain boundary diffusion.…”
Section: Discussionmentioning
confidence: 96%
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“…[5], who found at 1500°C a value of D < 5 Â 10 À21 m 2 s À1 . In view of this extremely low limit the diffusion in CVD-SiC can almost entirely be associated with grain boundary diffusion.…”
Section: Discussionmentioning
confidence: 96%
“…However, despite various measurements [4,5] no consistent diffusion coefficients for silver are currently available. Published results differ by orders of magnitude.…”
Section: Introductionmentioning
confidence: 99%
“…Into the coated wafers 360 keV ions were implanted at temperatures ranging from room temperature (RT) to 600 ºC with a fluence of either 2×10 16 Ag + cm -2 or 1×10 16 I + cm -2 and a flux not exceeding 10 13 cm -2 s -1 . High implantation temperatures were chosen to reduce irradiation damage.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…Our results are in variance with the findings of ref. [16], who observed no sign of silver migration via either inter-or intra-granular paths.…”
Section: Silver Transportmentioning
confidence: 98%
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