The Effect of Annealing on the Structural and Optical Properties of Mn2O3 Thin Film Prepared by Chemical Spray Pyrolysis

doi:10.21275/art20178429

Cited by 4 publications

(5 citation statements)

References 3 publications

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“…As a result of the process of pyrolysis of MnCl2 salt during interaction with atmospheric oxygen, a film of the binary bixbite compound α-Mn2O3 with n-type electrical conductivity and resistivity ρ ≈ 10 7 Ω•cm at room temperature is grown on the surface of the substrates. The band gap Eg ≈ 2.12 eV of the obtained films is in good agreement with the values of Eg given in the literature sources Eg  2.02 eV [12], Eg  2.2÷2.4 eV [13]. The n-Mn2O3 films grown by the spray-pyrolysis method have a high resistivity and a small electron diffusion coefficient Dn  5•10 -3 cm 2 /s [14].…”

Section: -2supporting

confidence: 89%

Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Tkachuk¹,

Orletskii²,

Ivanov³

et al. 2023

J. Nano- Electron. Phys.

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Photosensitive Mn2O3/n-InSe heterojunctions were produced by the method of low-temperature spray pyrolysis. An aqueous solution of the appropriate composition was sprayed onto a heated substrate made of a layered n-InSe crystal. As a result, a thin film of Mn2O3 was formed on its surface. The use of layered semiconductors makes it possible to obtain high-quality interfaces, even with significant differences in the crystal lattice parameters of the contacting materials. The front layer of the wide-gap semiconductor Mn2O3 is transparent in the region of maximum light absorption in InSe. This makes it possible to effectively exploit the photovoltaic properties of the latter. The photoelectric and optical properties of the obtained heterojunction were studied, the corresponding graphical dependences were constructed: current-voltage characteristics and differential resistance at different temperatures, temperature dependence of the height of the potential barrier, spectral dependence of the relative quantum efficiency in the photon energy range of 1.2÷3.2 eV. Theoretical models describing the obtained results are proposed. Based on the analysis of the temperature dependences of the direct and reverse branches of the current-voltage characteristics, the energy parameters of the heterojunction were determined. The value of the series and shunt resistances was evaluated. The mechanisms of the formation of forward and reverse currents through the Mn2O3/n-InSe energy barrier are determined.

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Section: -2supporting

confidence: 89%

Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Tkachuk¹,

Orletskii²,

Ivanov³

et al. 2023

J. Nano- Electron. Phys.

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“…Band gaps of Mn 2 O 3 (oP80) were estimated to be 2.17 and 2.4 eV for nanoparticles and thin films, respectively, whereas our calculated band gap is 3.0 eV [57,58]. Based on our calculations, Mn 2 O 3 (cI80) is a metallic conductor, whereas some experimental studies of nanostructured modifications suggest that the material possesses a band gap (1.24 or 1.8 eV) [57,115]. In this case, however, it is difficult to compare the results as the experimental studies also found that the band gap of Mn 2 O 3 (cI80) is directly correlated with the size of the nanoparticles (increased size leads to a smaller band gap).…”

Section: Magnetic Binary 3d-metal Oxidescontrasting

confidence: 58%

“…A direct comparison of the electronic structure of the Mn 2 O 3 modifications with experiments is not possible due to the absence of experimental data on bulk materials. Band gaps of Mn 2 O 3 (oP80) were estimated to be 2.17 and 2.4 eV for nanoparticles and thin films, respectively, whereas our calculated band gap is 3.0 eV [57,58]. Based on our calculations, Mn 2 O 3 (cI80) is a metallic conductor, whereas some experimental studies of nanostructured modifications suggest that the material possesses a band gap (1.24 or 1.8 eV) [57,115].…”

Section: Magnetic Binary 3d-metal Oxidesmentioning

confidence: 51%

Structural Properties and Magnetic Ground States of 100 Binary d-Metal Oxides Studied by Hybrid Density Functional Methods

Kuklin¹,

Eklund²,

Linnera³

et al. 2022

Molecules

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d-metal oxides play a crucial role in numerous technological applications and show a great variety of magnetic properties. We have systematically investigated the structural properties, magnetic ground states, and fundamental electronic properties of 100 binary d-metal oxides using hybrid density functional methods and localized basis sets composed of Gaussian-type functions. The calculated properties are compared with experimental information in all cases where experimental data are available. The used PBE0 hybrid density functional method describes the structural properties of the studied d-metal oxides well, except in the case of molecular oxides with weak intermolecular forces between the molecular units. Empirical D3 dispersion correction does not improve the structural description of the molecular oxides. We provide a database of optimized geometries and magnetic ground states to facilitate future studies on the more complex properties of the binary d-metal oxides.

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“…As a manganese oxide semiconductor, heterojunctions with g-C3N4 [7], СuOx [8], Fe2O3/Mn2O3 [9], n-Mn2O3/n-CdZnTe [10] are used. Thin films of Mn2O3 with a band gap Eg  2.01÷2.4 eV [11,12] are promising as a frontal material for heterojunctions. -Mn2O3 films are produced by spray-pyrolysis [12,13], electrodeposition [14], sol-gel method [15] etc.…”

Section: Introductionmentioning

confidence: 99%

“…Thin films of Mn2O3 with a band gap Eg  2.01÷2.4 eV [11,12] are promising as a frontal material for heterojunctions. -Mn2O3 films are produced by spray-pyrolysis [12,13], electrodeposition [14], sol-gel method [15] etc. The spray-pyrolysis method is characterized by simple hardware implementation and mobility of mode correction in the production of -Mn2O3 films with given physical properties.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties and Photosensitivity of n-Mn2O3/p-InSe Heterojunctions Produced by the Spray Pyrolysis Method

Orletskii,

Tkachuk,

Ivanov

et al. 2023

J. Nano- Electron. Phys.

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The conditions of application of thin semiconductor Mn2O3 films on p-InSe crystalline layered semiconductor substrates at a temperature of 623 K by the spray-pyrolysis method to create anisotypic heterojunctions n-Mn2O3/p-InSe were investigated. InSe is a promising material for photoelectronics. The use of the Mn2O3 film, which is transparent in the region of maximum photosensitivity of InSe, makes it possible to effectively exploit the optical properties of InSe in the fabrication of various semiconductor devices. The advantage of using layered semiconductors in the production of heterojunctions is that high-quality interfaces are obtained even with a significant discrepancy in the parameters of the crystal lattices of the starting materials. This significantly expands the choice of heterojunction materials. Electrical and photoelectric parameters of n-Mn2O3/p-InSe heterojunctions were measured and theoretical models describing them were proposed. The graphical dependencies of I-V characteristics, series resistance, height of the potential barrier and photosensitivity are constructed. It was established that these heterojunctions are photosensitive and have rectifying properties. Using the energy parameters of the starting materials, an energy diagram of the heterojunction was constructed, which allows for the analysis of physical processes in the obtained heterojunctions. Based on the temperature dependence of both direct and reverse I-V characteristics, the dynamics of changes in the energy parameters of the heterojunction with temperature, as well as the mechanisms of current flow through the heterojunction, are established. The spectral photosensitivity of the heterojunction was analyzed.

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The Effect of Annealing on the Structural and Optical Properties of Mn2O3 Thin Film Prepared by Chemical Spray Pyrolysis

Cited by 4 publications

References 3 publications

Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Photoelectric Properties of the Mn2O3/n-InSe Heterojunction

Structural Properties and Magnetic Ground States of 100 Binary d-Metal Oxides Studied by Hybrid Density Functional Methods

Electrical Properties and Photosensitivity of n-Mn2O3/p-InSe Heterojunctions Produced by the Spray Pyrolysis Method

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