The effect of antireflection coating on the characteristics of wideband silicon avalanche photodetectors

Abstract

Wideband detectors are becoming more and more widely used. In order to expand the response wavelength of silicon detectors, single-layer and double-layer antireflection coatings are used, and combined with the high gain characteristics of silicon avalanche photodetectors (APDs), their response band is extended to the range of 250-1100nm. Simulation analysis shows that the double layer antireflection coating has larger infrared enhancement than the single layer anti reflection coating. The Si APD with this structure can achieve high response from UV 250nm to 1100nm with multiplication, enabling efficient detection in the UV-visible-near-infrared band.