The effect of arsenic fluence on the boron diffusion in the polysilicon on monosilicon during rapid thermal annealing

Merabet, A.; Marcon, J.

doi:10.1016/j.nimb.2006.10.017

Cited by 3 publications

(1 citation statement)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The profiles peak evolution is similar to a Gaussian in the NiDoS region. The curves are not very abrupt at the interface and they differ clearly to those observed in poly‐Si/mono‐Si interfaces 9,10. The B redistribution profiles in the poly‐Si region show the continuous transfer within the poly‐Si/NiDoS interface.…”

Section: Methodsmentioning

confidence: 68%

Complex boron redistribution kinetics in strongly doped polycrystalline‐silicon/nitrogen‐doped‐silicon thin bi‐layers

Abadli

Mansour

Pereira

2012

Cryst. Res. Technol.

View full text Add to dashboard Cite

We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 • C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P + ) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 • C and 700 • C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model.

show abstract

Section: Methodsmentioning

confidence: 68%