In the last decade, perovskite-based solar cells (PSCs)
have become
the hotspot in photovoltaic (PV) research around the globe because
of their excellent photovoltaic performance in terms of their high-power
conversion efficiency. However, the stability and existence of lead
in the perovskite absorber layer hindered their use in practical applications.
In the present study, we evaluated the numerical simulation-based
performance of oxide/perovskite/oxide-type PSCs using the one-dimensional
solar cell capacitance program (SCAPS-1D). Initially, the effect of
various oxide-based electron transport layers (ETLs; TiO2, SnO2, and ZnO) and hole transport layers (HTLs; NiO,
Cu2O, and CuO) on PSC performance was evaluated. It was
found that a solar cell with TiO2 as an ETL and NiO as
an HTL (FTO/n-TiO2/CsSnI3/p-NiO) exhibited the highest PV performance in terms of
power conversion efficiency (PCE ∼ 30.57%), and other parameters
were open circuit voltage (V
OC ∼
0.98 V), short circuit current density (J
SC ∼ 35.17 mA/cm2) and fill factor (FF ∼ 88.43%).
Next, we evaluated the effect of the thickness of TiO2,
NiO, and CsSnI3 layers of the above-benchmarked device,
along with their bulk and interface defects in detail. It is successfully
demonstrated that the PCE and FF can further reach values of 31.09
and 88.39%, respectively, at a 1.25 μm thick CsSnI3 absorber with a band gap of E
g ∼
1.35 eV. The obtained results and detailed analysis will provide an
important basis for the selection of CsSnI3 as an absorber
with optimized defects.