Abstract:A theory is proposed for current–voltage characteristics of thin films on insulator MOS structures with an inverted back interface, that are nonequilibrium‐depleted by a linear voltage sweep. It is shown that the transfer of the transfer of the minority carriers through a potential barrier between the interfaces of the semiconductor film leads to the appearance of an additional current peak whose position depends on the temperature and barrier parameters. A method to determine the height of potential barrier a… Show more
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