The effect of backside films on rapid thermal oxidation (RTO) growth on silicon wafers

Omar, A.; Ahmad, Ibrahim

doi:10.1109/smelec.1998.781154

Cited by 1 publication

(1 citation statement)

References 3 publications

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“…Phosphorus segregates at the Si (SiC) side of the Si/SiO 2 (SiC/SiO 2 ) interface during oxidation of P‐doped Si and SiC, 68,69 and can therefore affect the interface reaction rate. However, implanted P does not reduce (and in concentrations greater than ∼10 19 cm −3 even increases) the oxidation rate of either Si 70–74 or SiC, 75,76 which is consistent with our observations that monazite does not affect the oxidation rate of pure SiC.…”

Section: Discussionsupporting

confidence: 92%

Monazite Coatings on SiC Fibers II: Oxidation Protection

Mogilevsky¹,

Boakye²,

Hay³

et al. 2006

Journal of the American Ceramic Society

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The effect of monazite on the oxidation of SiC was studied in laboratory and dry air. Monazite inhibited the oxidation of Tyranno‐SA™, Tyranno‐ZX™, Sylramic, and Hi‐Nicalon SiC fibers. Oxidation of pure chemical vapor deposition SiC and undoped SiC single crystals was not inhibited by monazite. Dry oxidation of both uncoated and monazite‐coated Tyranno‐SA™ fibers initially displayed parabolic kinetics with an activation energy of 180–190 kJ/mol. Subsequently, the oxidation rate of monazite‐coated fibers increased and the oxide‐scale growth rate approached that of the uncoated fibers. No differences in the composition or structure of the silica oxidation product could be detected between uncoated and coated fibers using transmission electron microscopy and energy‐dispersive spectroscopy. Possible mechanisms of the inhibition of SiC oxidation by monazite are discussed.

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Section: Discussionsupporting

confidence: 92%