The effect of backside roughness on Al interconnect dimensions for RF CMOS SOI devices

FOUP Material Influence on HF Contamination during Queue-Time

“…Ultra Clean Processing of Semiconductor Surfaces XII  Desorption of HF at outer atmosphere The diffusion of HF inside polymer is proportional to diffusion coefficient and to gradient concentration of gas (equation ii). The solubility and the diffusion coefficient of gas in low absorbing polymer are lower than those in polycarbonate [2]. Thus, PC surface has stronger adsorption with respect to HF and faster migration of contaminant inside PC depth.…”

“…In order to limit AMC effect, focus has first been given to moisture control between process steps, leading to the development of a new FOUP generation, made of low absorbing material. This material has better performances compared to standard polycarbonate (PC) [2]. But, as today's major AMC concern is Hydrofluoric acid (HF), new developments are needed to assess the benefit of such material with respect to HF acid challenge.…”