The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

Ng, H. M.; Harel, R.; Chu, S. N. G.; Cho, A. Y.

doi:10.1007/s11664-001-0006-2

Cited by 16 publications

(10 citation statements)

References 17 publications

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“…The observed PL lines are relatively sharp (mean half width at half maximum of 24.8 meV, see inset in Fig. 6) in comparison to already published data [4][5][6][7]. The observed barrier luminescence shows nearly constant energy across the sample, which supports constant Al concentration assumption.…”

Section: Photoluminescencesupporting

confidence: 84%

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Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells

et al. 2011

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We report studies on electric field built in GaN/Al 0.09 Ga 0.91 N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visible and mid infra-red interference pattern along the sample, the layer thickness and consequently the quantum well width was determined to vary linearly with the position. Secondly, photoluminescence spectra was taken at different positions. Correlation of those two measurements allows us to determine the built-in electric field to be 0.66 MV/cm, which is considerably larger than previously reported for similar structures.

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Section: Photoluminescencesupporting

confidence: 84%

“…7). This allows for the precise determination of value of F to be 0.66 MV/cm, which is significantly higher than previously reported for studies of GaN/Al x Ga 1−x N quantum well system [4][5][6][7]. …”

Section: Photoluminescencementioning

confidence: 66%

Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells

et al. 2011

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“…However, due to the larger well thickness the first transition energy in SL B and C is estimated to be below the bulk GaN band gap energy, as found by PL and CL measurements. A similar result has also been observed experimentally for AlGaN/GaN multiple quantum well structures with increasing well thickness [10].…”

supporting

confidence: 86%

Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

Darakchieva

Paskov

Schubert

et al. 2003

phys. stat. sol. (c)

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We report on a study of the optical properties of undoped AlN/GaN superlattices by means of spectroscopic ellipsometry and photo-and cathodoluminescence. The effect of well and barrier thicknesses on the superlattice transition energies has been studied. Model calculations of the SL miniband structure are performed to compare theoretical predictions with the experimentally determined values of the transition energies.1 Introduction AlGaN/GaN heterostructures have recently attracted considerable attention due to their potential applications for high power transistors and ultraviolet laser diodes. AlGaN/GaN and AlN/GaN superlattices (SLs) are very attractive for strain management, dislocation reduction, p-contacts and also infrared intersubband detectors. However, the fabrication of such heterostructures with high AlN molar fraction, needed for achieving high sheet carrier density, is hindered by the crack formation due to the large built-in strain [1]. Recently, a matal-organic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high mobility AlN/GaN SLs has been demonstrated [2]. While the electrical properties of AlN/GaN SLs have been extensively studied [1,3,4], little is known about their emission properties [5]. In addition no results on the absorption and reflectance of such SLs have been reported.In the present work we report on an ellipsometry study and investigation of the emission properties of undoped AlN/GaN SLs with different well and barrier thicknesses. Photoluminescence (PL) and chathodoluminescence (CL) at low and room temperature (RT), and RT spectroscopic ellipsometry (SE) in the near-infrared-visible-ultra violet range were employed.

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“…The discrepancy can be attributed to the strong built-in electric field present in the structure. The manifestation of the built-in field has been reported for single quantum wells [11]. For the case of IS transitions, it is the electric field in the barriers which has a more dominant effect on the IS transition energy.…”

Section: Resultsmentioning

confidence: 94%

Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions

Ng¹,

Gmachl²,

Siegrist³

et al. 2001

phys. stat. sol. (a)

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We report the results of the growth by molecular beam epitaxy of GaN/Al x Ga 1--x N superlattice (SL) structures with single or double quantum wells and thick Al x Ga 1--x N or short-period SL barriers. The dependence of intersubband absorption on the well width for single well SL structures was systematically investigated. For GaN quantum wells interleaved with SL barriers, the upper state electron confinement was maintained by Bragg reflection from the minigaps formed within the barriers. In addition, evidence of electron transfer from doped SL barriers to undoped GaN quantum wells was obtained. Abrupt interfaces and coherent periodicities of the SL structures were confirmed by transmission electron microscopy and X-ray diffraction measurements. Intersubband absorption at peak wavelengths between 1.4 and 4.2 mm has been observed.

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The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

Cited by 16 publications

References 17 publications

Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells

Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells

Optical properties of undoped AlN/GaN superlattices grown by metalorganic vapor phase epitaxy

Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions

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