The effect of carbon on strain relaxation and phase formation in the Ti/Si1−x−yGexCy/Si contact system

Eyal, Anna; Brener, R.; Beserman, R.; Eizenberg, M.; Atzmon, Z.; Smith, David J.; Mayer, J. W.

doi:10.1063/1.118120

Cited by 32 publications

(11 citation statements)

References 10 publications

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“…A similar phenomenon has been observed in the Zr/Si 1-x Ge x system, in which the formation temperatures of C49 ZrSi 2 and Zr(Si 1-x Ge x ) 2 are 650°C and 600°C, respectively. 8,34,35 At temperatures above 600°C, the reacted layer became rough with the extent of roughness being more severe at higher temperatures. 3.…”

Section: Resultsmentioning

confidence: 99%

Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15

Chung

Wang

Lin

et al. 2002

Journal of Elec Materi

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Section: Resultsmentioning

confidence: 99%

Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15

Chung

Wang

Lin

et al. 2002

Journal of Elec Materi

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“…The agglomeration due to thermal grooving of a silicide film is related to grain size, grain-boundary energy, and silicide interface and surface energy. [12][13][14][15][16][17][18][19][20][21] The thermal reactions between metal and Si 1Ϫx Ge x alloy layer, and their impact on device processing and properties are important, since these reactions can easily lead to a modification of the composition of the underlying unreacted Si 1Ϫx Ge x layer. 8,9 On the other hand, Si 1Ϫx Ge x material systems have achieved much interest due to the possibility of easy band gap engineering and easy integration with the conventional Si-based process technology.…”

Section: Introductionmentioning

confidence: 99%

Stability and composition of Ni–germanosilicided Si1−xGex films

Pey

Chattopadhyay

Choi

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Surface anisotropy in giant magnetic coercivity effect of cubic granular FeCo/SiO 2 and NiCo/SiO 2 films: A comparison with Néel's theory Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si (100) In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopyThe stability and composition of the Ni-germanosilicided films formed on relaxed Si 1Ϫx Ge x alloy has been studied in the temperature range of 400-900°C. During the solid phase thermal reaction between Ni and Si 1Ϫx Ge x , a nickel-germanosilicide Ni y (Si 1Ϫw Ge w ) 1Ϫy ternary phase (wрx and yϷ0.5) and a Ge-rich Si 1Ϫz Ge z phase (zϾx) have been found. In the lower annealing temperature range of 500°C, the Ge composition in the nickel-germanosilicide phase is similar to that of the Si 0.75 Ge 0.25 substrate. At the same time, germination of Si 1Ϫz Ge z (zϾx) takes place within the germanosilicide film. At higher annealing temperatures, Ni thermodynamically prefers to react with Si compared to Ge, and as a result, Ge segregates out from the germanosilicide grains to enrich Ge in the formed Si 1Ϫz Ge z (zϾx) grains in between the germanosilicide grains. On the other hand, the size of the germanosilicide grains increases almost linearly with annealing temperature while that for the Si 1Ϫz Ge z grains remains almost constant up to an annealing temperature of 700°C, and above which it increases sharply. As a result, the Ge-rich Si 1Ϫz Ge z grains make the germanosilicide film discontinuous, leading to an increase in the sheet resistance of the germanosilicide film.

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“…1,2 The formation of metal/Si 1Ϫx Ge x ohmic or rectifying contacts are required for the device applications. Thus, the interfacial reactions between some metals such as Ni, 3 , Pt, 4,5 Pd, 5,6 Ti, [7][8][9][10][11][12] Co, 13-16 on Si 1Ϫx Ge x films have been studied. In these reactions the formation of a ternary phase was generally accompanied by Ge segregation.…”

mentioning

confidence: 99%

Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films

Luo

Lin

Chang

et al. 1997

Journal of Applied Physics

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Pulsed KrF laser annealing can suppress the island structure formation and Ge segregation associated with the interfacial reactions of Ni/Si0.76Ge0.24. For the Ni/Si0.76Ge0.24 films annealed at an energy density of 0.1–0.3 J/cm2 nickel germanosilicide associated with the amorphous overlayer was formed, while at energy densities above 0.4 J/cm2 cellular structures of Ge-deficient Si1−xGex islands surrounded by Ni(Si1−xGex)2 due to the constitutional supercooling occurred. For the continuous Ni(Si1−xGex) films grown at 200 °C, subsequent laser annealing at a higher energy density of 0.6–1.0 J/cm2 caused transformation into homogeneous Ni(Si0.76Ge0.24)2 films without island structure and Ge deficiency which readily appeared on furnace annealing at temperatures above 400 °C. At energy densities above 1.6 J/cm2 the same cellular structures as described above were also noted.

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The effect of carbon on strain relaxation and phase formation in the Ti/Si1−x−yGexCy/Si contact system

Cited by 32 publications

References 10 publications

Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15

Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15

Stability and composition of Ni–germanosilicided Si1−xGex films

Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films

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