The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD

Verlaan, V.; Verkerk, A.D.; Arnoldbik, W.M.; Werf, C.H.M. van der; Bakker, Reuben M.; Houweling, Z.S.; Romijn, I.G.; Borsa, D.M.; Weeber, A.W.; Luxembourg, S.L.; Zeman, Miro; Dekkers, H.F.W.; Schropp, R.E.I.

doi:10.1016/j.tsf.2009.01.065

Cited by 38 publications

(25 citation statements)

References 26 publications

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“…1c). As the Si-N IR calibration constant was previously found to be dependent on the film composition [20], first, as the following: Fig. 1c, [N]/[Si] ratio was calculated for each r as presented in Fig.…”

Section: Optical Absorption Propertiesmentioning

confidence: 99%

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Anutgan

Atilgan

et al. 2011

Journal of Luminescence

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Section: Optical Absorption Propertiesmentioning

confidence: 99%

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Anutgan

Atilgan

et al. 2011

Journal of Luminescence

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“…By controlling the composition of these films it is possible to modify certain physical and electrical properties, such as refractive index, band gap, dielectric constant, density and stress, which are important for the desired applications. Although a large number of detailed investigations [9][10][11] have been carried out on the deposition and characterization of silicon-nitride films obtained by different preparation techniques, it is still a challenge to characterize the quality and the stoichiometry of the produced thin films. Most preparation technique claim to produce quality and stoichiometric material, while there is no experimental method which is able to verify the above properties easily.…”

Section: Introductionmentioning

confidence: 99%

Determination of the density of silicon–nitride thin films by ion-beam analytical techniques (RBS, PIXE, STIM)

Huszánk

Csedreki

Kertész

et al. 2015

J Radioanal Nucl Chem

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This work presents the investigation of some commercially available and commonly used Si 3 N 4 foils prepared with LPCVD technique. The density and the stoichiometry of these films were determined by Rutherford backscattering spectroscopy and profilometry, while the study of impurities was achieved with particle induced X-ray emission method. It was found that the density of the studied Si 3 N 4 films is significantly less (*2.71 g cm -3 ), while the stoichiometry is close to the values of the bulk material. The results were verified by measuring the ion energy loss through the films by scanning transmission ion microscopy.Keywords Silicon-nitride film Á Rutherford backscattering spectroscopy (RBS) Á Scanning transmission ion microscopy (STIM) Á Particle induced X-ray emission (PIXE)

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“…The variation of refractive index may be attributed to the change in the packing density as well as to the increase in the optical band gap with treatment plasma power i.e. N/Si atomic ratio [39]. Verlaan et al [39] have recently reported, for more than 13 previous works, that the change in refractive index (at 632 nm) of SiN x cannot determine the change in N/Si atomic ratio but the change in the optical band gap should be taken, also, into account.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Verlaan et al [39] have recently reported, for more than 13 previous works, that the change in refractive index (at 632 nm) of SiN x cannot determine the change in N/Si atomic ratio but the change in the optical band gap should be taken, also, into account. Thus, the decrease in refractive index with increasing rf power is attributed to both the changes in chemical composition and the optical band gap [39].…”

Section: Optical Propertiesmentioning

confidence: 99%

Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

et al. 2011

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Nitrided surfaces and composition gradients in thin films exhibit interesting mechanical, electrical and optical properties. Therefore, silicon (Si) thin films were prepared by electron beam evaporation and nitrided by an inductively coupled rf plasma. The effects of successive plasma processing power on structural and optical properties as well as electrical resistivity were examined by different characterization techniques. The Si thin films were transformed gradually into nitrides compound thin films and the amount of nitrogen in the film increased with increasing the rf processing power. The Si nitrided films showed structural, optical and electrical properties that depend on the nitriding power. Increasing the rf plasma processing power caused amorphization, reduced the thickness, increased transmittance, increased resistivity and decreased the reflectance of the Si films. The electrical resistivity increased about eight orders of magnitude when the sample nitrided at 500 W. Different optical band gap were determined indicating the presence of different competing phases in the same film. The decrease in refractive index with plasma treatment power is attributed to the possible change in the bucking density as well as to the increase in the band gap.

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The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD

Cited by 38 publications

References 26 publications

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

Determination of the density of silicon–nitride thin films by ion-beam analytical techniques (RBS, PIXE, STIM)

Properties of Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers

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