The Effect of Deposition Temperature of TiN Thin Film Deposition Using Thermal Atomic Layer Deposition

Abstract

In this study, the effect of deposition temperature of TiN thin films deposited using the thermal atomic layer deposition (ALD) method was investigated. TiCl4 precursor and NH3 reactive gas were used, and the deposition rate, resistivity change, and surface morphology characteristics were compared in the deposition temperature range of 400 °C–600°C. While resistivity decreased to 177 µΩcm as the deposition temperature increased to 600 °C, an increase in surface roughness (Rq) to 0.69 nm and a deterioration in the step coverage were identified. In order to obtain a high-quality TiN thin film with excellent resistivity and step coverage characteristics even at low deposition temperatures, the TiN thin film was post-treated with plasma in a combination of N2/He gas ratio of 3:2 to confirm the change in resistivity. X-ray diffraction analysis confirmed crystallization change in the TiN thin film caused by plasma energy. As a result, the resistivity of the TiN thin film deposited at 400 °C was confirmed to be lowered by about 25%.

Titanium nitride (TiN) as a promising alternative to plasmonic metals: a comprehensive review of synthesis and applications

“…This innovative approach offers insights into improving TiN thin film quality for semiconductor applications via ALD processes. 67 The evolution from conventional techniques like CVD to advanced methodologies such as ALD and PEALD has revolutionized the fabrication of TiN thin films, addressing challenges related to temperature, thickness control, and material purity. However, further advancements are required to mitigate some challenges related to ALD, such as the slow deposition rate, undesirable contaminants due to the decomposition of precursors, and carrier gas impurities in some films.…”

Fluorination of TiN, TiO2, and SiO2 Surfaces by HF toward Selective Atomic Layer Etching (ALE)

“…In the semiconductor industry, it is used as a diffusion barrier between interconnect metals such as copper (Cu) with dielectric layers. In addition, it is employed as metal gate electrodes due to its chemical stability and good adhesion to the substrates [1][2][3][4][5]. TiN is also highly resistant to corrosion and can withstand high temperatures, making it suitable for use in the aerospace and automotive industries, such as in wear-resistant coating and other high-stress applications [6][7][8].…”