The Effect of deposition times on preparation of SnO₂:F conductive glass by Indonesian local stannic chloride precursors

Abstract

The performance of fluorine-doped tin oxide (FTO) as an alternative semiconductor besides indium tin oxide (ITO) has been investigated. Currently, the precursors often used in the manufacture of fluorine-doped tin oxide (FTO) are commercial precursors on the market. In the present work, a thin film FTO will be fabricated using a pyrolysis spray technique with an ultrasonic nebulizer using Indonesian local precursors of stannic chloride with the variation of deposition times (5, 10, 15, 20 and 25 minus). Thin films were characterized by using x-ray diffraction (XRD), scanning electron microscope (SEM), ultraviolet-visible (UV-Vis) spectroscopy, and four-point probes. The optimum result obtained by pyrolysis technique with a deposition time of 20 minutes and substrate temperature at 300 °C has a resistivity of 1.059 x 10−4 Ω.cm and transmittance 89.614%. Fluorine-doped tin oxide (FTO) fabricated by using these local Indonesian precursors promise for further development as a glass of dye-sensitized solar cells (DSSC).

AlGaN as an electron transport layer for wide-bandgap perovskite solar cells

“…The resistivity of ITO and fluorine-doped tin oxide (FTO) films, both of which are TCO commonly used for solar cells, is approximately 10 −4 -10 −3 Ωcm. [35][36][37] This result suggests that AlGaN can be used as a conductive film in photovoltaic devices. Hence, as the electrical conductivity is high enough, ITO/FTO-free perovskite solar cells are expected to be realized, as has been reported for GaN.…”