The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions

Çaldıran, Zakir; Taşyürek, Lütfi Bilal; Nuhoglu, Y.

doi:10.1007/s10854-021-07176-8

Cited by 7 publications

(1 citation statement)

References 42 publications

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“…Indium compounds such as In 2 Se 3 , In 2 S 3 and In 2 O 3 are widely reported for efficient photoelectric detection [10][11][12][13][14][15][16][17][18]. Because metal oxides can be used as interface layers in metal/semiconductor contacts to change the optoelectronic properties of heterojunctions, they are widely used in optoelectronic devices [19]. Therefore, In 2 O 3 has been considered a promising candidate for UVA PD fabrication among indium compounds, due to its suitable bandgap (3.7 eV), high mobility and stable chemical and optical properties [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

Li,

Chen,

et al. 2024

Crystals

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Oxygen vacancies (Vo) can significantly degrade the electrical properties of indium oxide (In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the Vo is effectively suppressed by adjusting the Trimethylindium (TMIn) flow rate (fTMIn). In addition, with the reduction of the fTMIn, the background carrier concentration and the roughness of the film decrease gradually. And a smooth In2O3 thin film with roughness of 0.44 nm is obtained when the fTMIn is 5 sccm. The MSM photodetectors (PDs) are constructed based on In2O3 thin films with different fTMIn to investigate the opto-electric characteristics of the films. The dark current of the PDs is significantly reduced by five orders from 100 mA to 0.28 μA with the reduction of the fTMIn from 50 sccm to 5 sccm. In addition, the photo response capacity of PDs is dramatically enhanced. The photo-to-dark current ratio (PDCR) increases from 0 to 2589. Finally, the PD with the fTMIn of 5 sccm possesses a record-high responsivity of 2.53 × 103 AW−1, a high detectivity of 5.43 × 107 Jones and a high EQE of 9383 × 100%. Our work provides an important reference for the fabrication of high-sensitivity UV PDs.

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