The effect of different radio-frequency powers on characteristics of amorphous boron carbon thin film alloys prepared by reactive radio-frequency plasma enhanced chemical vapor deposition

The effect of the native silicon dioxide interfacial layer on photovoltaic characteristics of gold/p-type amorphous boron carbon thin film alloy/silicon dioxide/n-type silicon/aluminum solar cells

“…Fig. 6 shows the XPS spectrum of the a-BC thin film alloy, revealing the B 1s core around 189 eV, the C 1s core around 285 eV, and the O 1s core around 531 eV [19,31]. The B 1s and C 1s peaks in the XPS spectrum confirm the successful incorporation of boron into the a-BC thin film alloy.…”

“…6 also presents the enlarged C 1s core level in the XPS spectrum of the a-BC thin film alloy, the peak of which is centered at 284.1 eV. The binding energies of 284.1 and 285.1 eV are attributed to the sp 2 carbon bond and sp 3 carbon bond, respectively [19,34]. Therefore, the amount of sp 2 carbon bonds in the a-BC thin film alloy exceeds that of the sp 3 carbon bonds.…”

“…5 displays the FTIR spectrum of the a-BC thin film alloy, which can be utilized to identify the nature of C-H bonding (stretching mode) therein [28,29]. The integrated area under the peak that is associated with the sp 2 -CH x and sp 3 -CH x bonds of the a-BC thin film alloy reveals that a little hydrogen is incorporated into the a-BC thin film alloy [19,30]. Fig.…”

“…Reactive sputtering combines sputtering and plasma-enhanced chemical vapor deposition (PECVD); the method is not dangerous, and has all of the advantages of CVD [19]. Therefore, this method was used in this study to fabricate amorphous boron carbon (a-BC) thin film alloy.…”

“…Therefore, this method was used in this study to fabricate amorphous boron carbon (a-BC) thin film alloy. The deposition of a semiconductor on silicon with a native silicon dioxide (SiO 2 ) layer reportedly improves the photovoltaic characteristics of solar cells in which it is used [2,[19][20][21]. Hence, the effect of a native SiO 2 layer on the photovoltaic characteristics of a-BC/SiO 2 / n-Si solar cells is investigated.…”