The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs

Bertilsson, Kent; Nilsson, Hans‐Erik; Hjelm, Mats; Petersson, C. S.; Käckell, P.; Persson, Clas

doi:10.1016/s0038-1101(01)00127-7

Cited by 12 publications

(2 citation statements)

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“…V ERTICAL transistors are a promising alternative to planar devices for novel wide-bandgap semiconductors [1], [2]. Despite the progress made in the production of high-quality epitaxial films, the manufacture of reliable planar transistors with reproducible properties and acceptable yield is still beyond state of the art technology.…”

Section: Introductionmentioning

confidence: 99%

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Physics-based modeling of submicron GaN permeable base transistors

Camarchia

Bellotti

Goano

et al. 2002

IEEE Electron Device Lett.

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We present the first physics-based nonstationary modeling of a submicron GaN permeable base transistor. Three different transport models are compared: drift-diffusion, energy balance, and ensemble Monte Carlo. Transport parameters and relaxation times used by the carrier transport equations are consistently derived from particle simulation. The current-voltage ( -) characteristics predicted with the energy balance model are in good agreement with those obtained from direct Monte Carlo device simulation. On the other hand, the drift-diffusion approach appears to be inadequate for the device under study, even if improved high-field mobility models are adopted.Index Terms-Gallium nitride, hydrodynamic models, Monte Carlo method, permeable base transistors, submicron vertical MESFETs.

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Section: Introductionmentioning

confidence: 99%

“…PBTs have been demonstrated on silicon [4], GaAs [5], and SiC [1], [6] for high frequency and high power applications; theoretical investigations include [2], [5], [7]- [9]. The present industrial effort toward the production of GaN PBTs must be supported by reliable modeling tools.…”

Section: Introductionmentioning

confidence: 99%

Physics-based modeling of submicron GaN permeable base transistors

Camarchia

Bellotti

Goano

et al. 2002

IEEE Electron Device Lett.

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Band structure anisotropy effects on ultrafast electron transport in 6H-SiC

Maia

Flores

Freire

et al. 2004

phys. stat. sol. (c)

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The time evolution of the electron drift velocity v d (t) and mean energy ε(t) in 6H-SiC towards the steady state is studied taking into account band structure anisotropy effects. The electric field is considered to be applied perpendicular and parallel to the c-axis of the hexagonal crystal. Anisotropy is shown to change the characteristics of the overshoot effect in the electron drift velocity (the strength and instant of time in which the velocity peak occurs) and to alter the transient regime of the electron mean energy, giving rise to an overshoot effect in ε(t) only in the direction perpendicular to the c-axis.

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