The effect of energy and momentum transfer during magnetron sputter deposition of yttrium oxide thin films

Xia, Jinjiao; Liang, Wenping; Miao, Qiang; Depla, Diederik

doi:10.1016/j.apsusc.2017.12.205

Cited by 20 publications

(9 citation statements)

References 46 publications

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“…4b acquired for the (222) lattice plane indicates a relatively high out-of-plane mosaicity of about 8° which shows that an important crystalline disorder exists. Preferential orientation along (111) has already been reported for Y 2 O 3 polycrystalline films obtained by various techniques 38,39 .Such texturing is a consequence of the minimization of free surface energy of the grains as well as a competitive growth between grains of different orientations as expected from a columnar growth model. We note that, although all films produced in this study displayed preferential texture, full (111)-texture was only obtained when a thin chemical silicon oxide layer (around 4 nm) was intentionally created by using an RCA cleaning procedure ending with an oxidation step.…”

Section: 1-structural and Morphological Characterization Of The Y2o3 Thin Filmsmentioning

confidence: 82%

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Harada

Ferrier

Serrano

et al. 2020

Journal of Applied Physics

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Rare earth ions hosted in solids are good candidates for quantum technologies due to their chemical stability and optical and spin transitions exhibiting long coherence lifetimes. While bulk oxide crystals are usually the preferred host material, the development of a scalable silicon-compatible thin film platform would be desirable. In this paper, we report on the growth of Y2(1−x)Eu2xO3 thin films on silicon in the full range of Eu3+ concentration by direct liquid injection chemical vapor deposition (CVD). Our sub-micrometer polycrystalline films with a strong-(111) texture were grown for all compositions into the bixbyite cubic phase. The variation of growth rates with temperature and flow indicated that deposition occurred through a mass-transport controlled regime. Optical assessment of the Eu-doped thin films showed inhomogeneous linewidths as narrow as 50 GHz and fluorescence lifetimes of 1 ms for the lowest concentrations. Finally, a spectral hole was successfully burned in a 200 nm-thin film with a 2% Eu doping leading to a homogeneous linewidth of 11 MHz. These values are still below those reported for bulk single crystals indicating that additional decoherence mechanisms exist in such nanometric films, which might be alleviated by further improvement of the crystalline quality. Nevertheless, these results pave the way to the use of CVD-grown Eu:Y2O3 thin films as a platform for integrated quantum devices.

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Section: 1-structural and Morphological Characterization Of The Y2o3 Thin Filmsmentioning

confidence: 82%

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Harada

Ferrier

Serrano

et al. 2020

Journal of Applied Physics

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“…The Y-F bonds form because fluorine atoms have a higher electronegativity than oxygen atoms (4.0 vs. 3.5). Higher electronegativity promotes electron transfer to fluorine, decreasing the electron density around the cation and hence increasing the binding energy [27,28]. In the SF6 plasma-treated Y2O3 films, the locations of the XPS peaks were less changed after exposure to fluorocarbon plasma (Figure 5c,d).…”

Section: Resultsmentioning

confidence: 98%

Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Wang

Liu

et al. 2020

Coatings

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Yttrium oxyfluoride (YOF) protective materials were fabricated on sputter-deposited yttrium oxide (Y2O3) by high-density (sulfur fluoride) SF6 plasma irradiation. The structures, compositions, and fluorocarbon-plasma etching behaviors of these films were systematically characterized by various techniques. After exposure to SF6 plasma, the Y2O3 film surface was fluorinated significantly to form a YOF film with an approximate average thickness of 30 nm. X-ray photoelectron spectroscopy revealed few changes in the elemental and chemical compositions of the surface layer after fluorination, confirming the chemical stability of the YOF/Y2O3 sample. Transmission electron microscopy confirmed a complete lattice pattern on the YOF/Y2O3 structure after fluorocarbon plasma exposure. These results indicate that the SF6 plasma-treated Y2O3 film is more erosion resistant than the commercial Y2O3 coating, and thus accumulates fewer contamination particles.

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Section: Resultsmentioning

confidence: 99%

“…In the sputter deposition process, the striking particle energy, the substrate temperature, the microstructure of the film, as well as the process parameters such as gas pressure, gas ratio, and power may have some effects on the value and the type of the intrinsic stress within the deposited film on the substrate. [28][29][30][31][32] The average residual stress throughout the thickness of the film system after the deposition process, which is called "asdeposited stress", was calculated using Equation (1) for the four metallization systems, and is presented in Table 1. According to this table, different values of stress remain in the films after deposition on the Si substrate, while the type of as-deposited stress in all of the metallization systems is compressive.…”

Section: Film Stress Before and After Annealingmentioning

confidence: 99%

Thermomechanical and Creep Behaviors of Multilayered Metallization Systems Developed for High‐Temperature Surface Acoustic Wave Sensors

Karimzadeh

Park

Seifert

et al. 2023

Adv Materials Technologies

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The structural stability and durability of a sensing device at high‐temperatures (HT) have important effects on its functionality and reliability. This becomes more critical in the devices that work based on the surface acoustic waves (SAW). In this study, the thermomechanical and creep behaviors of the metallization systems, RuAl, MoLa, and Mo suggested for the electrodes of HT‐SAW sensors are investigated. Several experiments are designed to obtain the state and the value of stress in the films deposited on a Si [100] substrate caused by the fabrication process and the operational conditions. Results show that after the film deposition, the intrinsic compressive stress in the MoLa film is significantly lower than the other films. However, after annealing the samples, the lowest residual stress is reached in the Mo. Linear stress variations during the thermal cycling of the annealed samples are obtained for all metallizations. To study the durability of the films at HT, the creep behavior of the samples is investigated by keeping them at a temperature of 600 °C for 10 h. The creep rate and its constitutive equation for the films are obtained. It is observed that the creep rate of MoLa and Mo films is much lower than RuAl.

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The effect of energy and momentum transfer during magnetron sputter deposition of yttrium oxide thin films

Cited by 20 publications

References 46 publications

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Plasma Etching Behavior of SF6 Plasma Pre-Treatment Sputter-Deposited Yttrium Oxide Films

Thermomechanical and Creep Behaviors of Multilayered Metallization Systems Developed for High‐Temperature Surface Acoustic Wave Sensors

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