The effect of etching time on the CdZnTe surface

Bensalah, H.; Plaza, J.L.; Crocco, J.; Zheng, Qing; Carcélen, V.; Bensouici, A.; Diéguez, E.

doi:10.1016/j.apsusc.2010.12.103

Cited by 32 publications

(10 citation statements)

References 5 publications

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“…The changes in surface composition from exposing CZT in 0. peak was found to be 572.9 ± 0.1 eV and this drops to a value of 572.5 eV in the bulk, consistent with Te in a CZT matrix [10]. The bulk concentrations of Cd and Zn were found on average to be 37 and For both the 0.2 and 2.0 v/v % BM exposures, the passivated surfaces with the shortest BM exposure time (5 s) exhibit a slightly thinner oxide layer than those exposed for longer times, probably due to there being a slightly thinner Te enriched layer for these surfaces.…”

Section: Czt Surface Composition After Bm Etchingmentioning

confidence: 59%

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An XPS study of bromine in methanol etching and hydrogen peroxide passivation treatments for cadmium zinc telluride radiation detectors

Babar

Sellin

Watts

et al. 2013

Applied Surface Science

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Section: Czt Surface Composition After Bm Etchingmentioning

confidence: 59%

“…Bensalah et al have shown that variation in BM exposure affects the surface roughness and leakage current [10]. The Te enrichment changes the stoichiometry of the surface and due to smaller band gap (~0.3 eV), increases the leakage current, deteriorating the radiation detector performance.…”

Section: Introductionmentioning

confidence: 99%

An XPS study of bromine in methanol etching and hydrogen peroxide passivation treatments for cadmium zinc telluride radiation detectors

Babar

Sellin

Watts

et al. 2013

Applied Surface Science

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“…iii) Then anode and cathode surfaces were protected by a thin wax film. iv) Afterwards the edges were lapped manually with Al 2 O 3 powder 3 μm to remove the gold from the edges, and then etched with the same condition named above [9].…”

Section: Methodsmentioning

confidence: 99%

Study of ammonium fluoride passivation time on CdZnTe bulk crystal wafers

Bensalah

Crocco

Carcélen

et al. 2011

Cryst. Res. Technol.

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The chemical etching and the passivation processes of CdZnTe wafers were studied. The treatment effects were tested through an X-Ray Photoelectron Spectroscopy (XPS) analysis and I-V measurement. The chemical etching in 2%Br-MeOH solution may effectively remove the damaged layer and improve the ohmic contact between CdZnTe wafer and Au electrodes making rich the surface with Te. After different etching times, the CdZnTe wafers were passivated with NH 4 F/H 2 O 2 .CdZnTe wafer passivated immediately after etching showed the best passivation efficiency because the enriched Te on the surface was fully oxidized to TeO 2 , which results in the thickest oxide layer, and the most stoichiometric surface. Also the surface leakage current was reduced in comparison with the sample passivated 24 h after etching.

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“…Further treatments, such as chemo-mechanical polishing with a bromine etchant [26], passivation [27][28][29] and hydrogen plasma [30] or argon ion [31] etching have been demonstrated to reduce leakage current, modify the surface stoichiometry and work function, and improve detector performance.…”

mentioning

confidence: 99%

“…Characterization techniques such as x-ray photoelectron spectroscopy (XPS) [25], Auger electron spectroscopy (AES) [23], Rutherford backscattering spectroscopy (RBS) [22,32,33], atomic force microscopy (AFM) [22,24,26,34,35] and scanning electron microscopy (SEM) [22,26] have been used in these investigations.…”

mentioning

confidence: 99%