The effect of exposure time and development time on photoresist thin film in Micro/Nano structure formation

Abstract

precise transfer of pattern means guarantee in high repeatability and reliability, high throughput and low cost of ownership. By improving this resolution and alignment precision the minimum size can be further reduced to 1nm and beyond. The other important aspect of achieving minimum precised size is the photo resist must be very sensitive to the exposure light to achieve reasonable throughput. However, if the sensitivity is too high, other photoresist characteristics can be affected, including the resolution. Thus, the paper present a preliminary study on fundamentals of resist exposure and development mechanisms for fabrication of Micro-Nanowire formation, We demonstrated significance of considering process parameters such as quality of resist, soft bake, exposure time and intensity, and development time.

Scanning digital oil immersion lithography providing high-speed large area patterning with diffraction limited sub-micron resolution

“…The result shows a correlation between the intensity of the light source and exposure time. The exposure time can influence the resolution of the features [21]. However, we did not observe an obvious correlation between the light intensity and the resolution for the power range we tested due to the very low light intensity in our system.…”