The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface

Abstract

It is shown that the f luorine-containing anodic layers at the n-In 0.53 Ga 0.47 As surface, in contrast to the f luorine-free anodic layers, form a SiO 2 /InGaAs interface with the unpinned Fermi level, where the density of states decreases upon annealing at a temperature of 300°C to (2-4) × 10 11 and (4-5) × 10 12 eV -1 cm -2 near the bottom of the conduction band and the center of the band gap, respectively. An increase in the annealing temperature leads to a reverse increase in the density of states (350°C) and pinning of the Fermi level (400°C).