The effect of fluorine on MOSFET channel length

Lin, D.-G.; Rost, T.A.; Lee, H.S.; Lin, Der-Gao; Tsao, A.; McKee, B.

doi:10.1109/55.244733

Cited by 8 publications

(2 citation statements)

References 6 publications

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“…[1][2][3] Many of these studies report that the presence of F ions could retard the diffusion of dopants in silicon, for either heavy dopants as phosphorus and arsenic, 4 as well as light dopants as boron. [1][2][3] Many of these studies report that the presence of F ions could retard the diffusion of dopants in silicon, for either heavy dopants as phosphorus and arsenic, 4 as well as light dopants as boron.…”

Section: Introductionmentioning

confidence: 99%

Activation improvement of ion implanted boron in silicon through fluorine co-implantation

Shauly¹,

Lachman-Shalem²

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this study, boron diffusion and activation characteristics of samples implanted with F co-implantation were studied to meet the challenge of lower sheet resistance. Samples were implanted with F co-implantation in a dose range of 0 ͑no F͒ to 5ϫ10 15 cm Ϫ2 , at a fixed energy of 25 keV, followed by 950°C/10 s rapid thermal annealing. It was found that although the fluorine has a negligible affect on the boron diffusion at the specified conditions, a higher F dose reduced the boron sheet resistance. Using reverse modeling, the boron solid solubility at 950°C was extracted as function of the F co-implant concentration. For low fluorine doses (0 -1ϫ10 14 cm Ϫ2 ), the boron solid solubility is similar to that reported in the literature (9ϫ10 19 cm Ϫ3 ). At higher doses, boron solid solubility increased by 25% and even 50% for F co-implantation doses of 1ϫ10 15 and 5 ϫ10 15 , respectively. We suggest that the F co-implantation terminates some of the defects created by the implantation, inactivating the defects and improving boron activation.

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Section: Introductionmentioning

confidence: 99%

Activation improvement of ion implanted boron in silicon through fluorine co-implantation

Shauly¹,

Lachman-Shalem²

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…However, few studies have focused on the fluorine effect as the function of the channel length. Lin et al [7] studied the effect of fluorine incorporation on the transistor channel length using ion implantation after lightly doped drain (LDD) implantation. They improved the short channel effect of transistor by fluorine retarding influence of the phosphorus lateral diffusion.…”

Section: Introductionmentioning

confidence: 99%

Fluorine Effects on NMOS Characteristics and DRAM Refresh

Choi¹

2012

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.

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Selective atomic layer deposition of MoSix on Si (0 0 1) in preference to silicon nitride and silicon oxide

Choi

Ahles

Hung

et al. 2018

Applied Surface Science

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The effect of fluorine on MOSFET channel length

Cited by 8 publications

References 6 publications

Activation improvement of ion implanted boron in silicon through fluorine co-implantation

Activation improvement of ion implanted boron in silicon through fluorine co-implantation

Fluorine Effects on NMOS Characteristics and DRAM Refresh

Selective atomic layer deposition of MoSix on Si (0 0 1) in preference to silicon nitride and silicon oxide

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The effect of fluorine on MOSFET channel length

Cited by 8 publications

References 6 publications

Activation improvement of ion implanted boron in silicon through fluorine co-implantation

Activation improvement of ion implanted boron in silicon through fluorine co-implantation

Fluorine Effects on NMOS Characteristics and DRAM Refresh

Selective atomic layer deposition of MoSix on Si (0 0 1) in preference to silicon nitride and silicon oxide

Contact Info

Product

Resources

About

Selective atomic layer deposition of MoSix on Si (0 0 1) in preference to silicon nitride and silicon oxide