The effect of Gamma irradiation on the stability of amorphous InGaZnO metal-semiconductor-metal UV photodetectors

Huang, Chun‐Ying

doi:10.1016/j.jnoncrysol.2020.120292

Cited by 32 publications

(24 citation statements)

References 34 publications

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“…The RMS roughness values change from 0.27 to 0.29 nm after X-ray irradiation at a total dose of 100 Gy. The effects of X-ray irradiation on the IGZO thin films observed herein are consistent with those reported in previous studies on γ-ray-irradiated IGZO thin films . The radiation hardness of the IGZO TFT was mainly attributed to the spherical Zn s orbitals forming the conduction band minimum (CBM) because electron transport through the overlap of spherical s orbitals is not strongly affected by the lattice disorder.…”

Section: Resultssupporting

confidence: 89%

“…The effects of X-ray irradiation on the IGZO thin films observed herein are consistent with those reported in previous studies on γ-ray-irradiated IGZO thin films. 59 The radiation hardness of the IGZO TFT was mainly attributed to the spherical Zn s orbitals forming the conduction band minimum (CBM) 60 because electron transport through the overlap of spherical s orbitals is not strongly affected by the lattice disorder. The experimental results for IGZO TFTs in this study confirm the robustness of IGZO TFTs in harsh radiation environments.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Yatsu

Lee

Kim

et al. 2022

ACS Appl. Electron. Mater.

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A radiation-hard oxide-thin-film transistor (TFT)-based complementary metal–oxide–semiconductor (CMOS) logic circuit composed of p-type tin oxide (SnO X ) and n-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was proposed. The chemical states and crystalline structure of oxide thin films and their surface morphologies were analyzed as a function of the X-ray irradiation dose, exhibiting excellent radiation stability and durability for both oxide thin films under X-ray irradiation. After X-ray irradiation at a very high dose, a slight change in the chemical states was observed in both thin films, that is, an increase in the oxygen vacancies and tin dioxide components in the SnO X thin films and in the oxygen vacancy components in the IGZO thin films. The change in the chemical states observed in both thin films after X-ray irradiation explained the slight X-ray-induced negative shift of the transfer curves for both oxide TFTs. The fabricated CMOS inverter exhibited typical voltage transfer characteristics and a maximum gain of ∼33.4 V/V at a supply voltage of 10 V, which were well sustained after X-ray irradiation, even at a high dose of 100 Gy. In this study, we show that oxide-TFT-based CMOS logic circuits can potentially be used to demonstrate high-performance and radiation-robust large-area electronic systems operating in harsh X-ray environments.

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Section: Resultssupporting

confidence: 89%

Section: ■ Results and Discussionmentioning

confidence: 99%

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Yatsu

Lee

Kim

et al. 2022

ACS Appl. Electron. Mater.

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“…The dark current increased to 61.65 μA in +2 volt in first step. An initial current enhancement at the first step followed by a gradual decrease upon gamma dose increasing in the next shorter steps, as shown in the inset picture for 1.4 V. This observation is not similar to the earlier observations for the higher doses 1,[18][19][20][21] . Thereafter, the sample left for 24 hours and then repeated the I-V test.…”

Section: Gan (15 μM)contrasting

confidence: 75%

The effect of low dose γ-irradiation on the optoelectric properties of n-GaN based MSM structure

Barghamadi

Alam

Ghafari

et al. 2021

Preprint

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The room temperature effect of a low dose rate (10-4 rad (Si)/s) 60 Co γ-irradiation on the structural propertiesand dark current of the GaN-based metal-semiconductor-metal (MSM) structure has been studied. In contrast to previous studies, a non-monotonous dependence of the dark current with the γ-irradiation dose is observed. The intensity and linewidth of the photoluminescence (PL) peaks correlate with the changes in electrical characteristics and eventually degrade after prolonged exposure to the γ-radiation. The abnormal behavior of the MSM structure and particularly its I-V and PL characteristics are explained by considering the carrier transfer mechanism in the localized states. These phenomena are associated with the decrease of shallow donors’ density in localized states and the activation of the non-radiative centers as radiation dose increases. These experimental results and the mechanism presented are essential for understanding the interaction of the γ-irradiation with n-GaN and for estimation of reliability of GaN-based (opto)electronics in harsh conditions of γ-radiation (space applications, liquidation of consequences of technogenic catastrophes, etc.).

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“…Glasses represent an important class of metastable solids, finding versatile utility in modern civilization. − Various compositions within different families of glass-forming materials, such as oxides, chalcogenides, metals, organic, and polymeric systems, have broad-ranging exploitable properties for applications ranging from packaging systems, batteries, solar cells, catalysts, photo/nuclear detectors, and communication devices . Good glass formers such as silicate glasses do not generally crystallize under practical time scales upon providing thermal energy .…”

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confidence: 99%

Crystallization Kinetics in a Glass-Forming Hybrid Metal Halide Perovskite

Singh

Mitzi

2022

ACS Materials Lett.

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The recent discovery of glass-forming hybrid metal halide perovskite (MHP) semiconductors has opened the opportunity to explore their utility beyond the already celebrated fields of photovoltaics and light emitters, as enabled by their crystalline counterparts. Reversible switching phenomena between glassy and crystalline states further extends the potential application space, prospectively, to memory, computing, photonics, metamaterials, and phase change energy storage. To better identify the characteristic switching properties, the underlying kinetics of glass crystallization is studied for an e x e m p l a r y g l a s s -f o r m i n g ( S ) -( − ) -1 -( 1 -n a p h t h y l )ethylammonium lead bromide (SNPB) perovskite, using a combination of calorimetry, microscopy, and kinetic modeling techniques. The study shows an activation energy of ∼350 kJ/mol for the glass-crystalline transition and an Avrami parameter of n = 2.02 ± 0.11, and points to heterogeneous surface-mediated nucleation of crystallites with two-dimensional laminar growth in space. These results serve as an initial guide toward modeling the glass-crystallization kinetic effects in MHPs and to facilitate assessment of the suitability of the glass-forming MHPs for a broad range of prospective applications.

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The effect of Gamma irradiation on the stability of amorphous InGaZnO metal-semiconductor-metal UV photodetectors

Cited by 32 publications

References 34 publications

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

Highly Stable Oxide Thin-Film Transistor-Based Complementary Logic Circuits under X-ray Irradiation

The effect of low dose γ-irradiation on the optoelectric properties of n-GaN based MSM structure

Crystallization Kinetics in a Glass-Forming Hybrid Metal Halide Perovskite

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