The Effect of General Strain on the Band Structure and Electron Mobility of Silicon

Ungersboeck, E.; Dhar, S.; Karlowatz, G.; Sverdlov, Viktor; Kosina, H.; Selberherr, S.

doi:10.1109/ted.2007.902880

Cited by 187 publications

(134 citation statements)

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“…The effect of different types of strain (uniaxial, biaxial, tensile, and compressive) on the band structure of Si and device properties has been analyzed using different simulation techniques [81][82][83][84][85][86].…”

Section: Comparison With Theorymentioning

confidence: 99%

Electronic and Optical Properties of Dislocations in Silicon

Reiche

Kittler

2016

Crystals

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Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight binding simulations. It is shown that the high strain level on the dislocation core-exceeding 10% or more-causes locally dramatic changes of the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas and single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity.

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Section: Comparison With Theorymentioning

confidence: 99%

Electronic and Optical Properties of Dislocations in Silicon

Reiche

Kittler

2016

Crystals

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“…It has been shown that the electron affinity χ S changes [14] with mechanical strain. In chapter 2 the dependence of the electron affinity on .…”

Section: Outline Of the Thesismentioning

confidence: 99%

“…It has been reported that the conduction band valleys in a semiconductor depend on strain [14,23,24]. However, there is an additional effect to take into account.…”

Section: Quantum Confinementmentioning

confidence: 99%

“…where Ξ d , Ξ u and the dilatational and uniaxial deformation potentials for a given conduction band zone, Θ is the band separation between the two lowest conduction bands at the conduction band edge of the unstrained lattice [14]. The dimensionless parameter κ = Θ/(4Ξ u ′ ) depends on the deformation potential responsible for the band splitting of the two lowest conduction bands at a given zone, which in the silicon case is given by the ∆ valley [14].…”

Section: Appendix B Strain and Band Offsetmentioning

confidence: 99%

“…The dimensionless parameter κ = Θ/(4Ξ u ′ ) depends on the deformation potential responsible for the band splitting of the two lowest conduction bands at a given zone, which in the silicon case is given by the ∆ valley [14]. The energy levels of the band valleys depends on the strain, however, also the shape of the bands changes.…”

Section: Appendix B Strain and Band Offsetmentioning

confidence: 99%

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