The effect of heating rate on BaZrxTi1-xO3 thin film for x=0.4 and x=0.6 as capacitors

Dewi, Rahmi; Luqman, T.S.; Hamzah, Yanuar; Krisman,; Rini, Ari Sulistyo

doi:10.1016/j.jmrt.2022.04.044

Cited by 5 publications

(3 citation statements)

References 33 publications

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“…Among the samples tested, the BT-BZT700 showed the lowest resistance with a capacitance value of 2.9 µF, facilitating faster charge transfer. This BT-BZT capacitance value is higher than the BZT capacitance value in nano Farad units carried out by Dewi et al 32 .…”

Section: Resultscontrasting

confidence: 59%

“…The polarization can enhance the dielectric constant due to the emersion of high dipole moments [29][30][31] . The dielectric constant value of BT-BZT is much increased compared to research conducted by Dewi et al 32 , which only used BZT material.…”

Section: Resultsmentioning

confidence: 80%

“…The charge transfer kinetics increase with temperature and increase polarization, which results in high dielectric losses. Charge accumulation at grain boundaries caused high dielectric losses at higher temperatures 29,30,32 .…”

Section: Resultsmentioning

confidence: 99%

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Electrical Properties Analysis of Dielectric Thin Films 0.2BaTiO3 – 0.8BaZr0.5Ti0.5O3 on Fluorine Doped Tin Oxide Substrate

Dewi,

Nursyafni,

Daulay

et al. 2024

Mat. Res.

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Ferroelectric thin films of 0.2BaTiO 3 -0.8BaZr 0.5 Ti 0.5 O 3 (BT-BZT) are dielectric materials applied in various sensors, particularly in capacitor manufacturing, due to their excellent electrical properties. This ferroelectric material also has a high dielectric constant value, such that it is suitable for use in Ferroelectric Random Access Memory (FeRAM) and microwaves. Therefore, this study aimed to synthesize thin BT-BZT films with annealing temperature variations of 700 °C, 750 °C, and 800 °C. To achieve this, the sol-gel method was applied to Fluorine Doped Tin Oxide (FTO) substrate, a selected technique for its simplicity and cost-effectiveness. The electrochemical properties were characterized using electrochemical impedance spectroscopy (EIS). The research results show that at a frequency of 100 Hz, the highest dielectric constant obtained was 58975.43 at a temperature of 800 °C. This temperature has the highest resistance compared to other samples. The highest capacitance value is 2.9 µF at a temperature of 700 o C. Therefore, it was concluded that the annealing temperature influenced the dielectric constant and the capacitance values of the capacitor.

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Section: Resultscontrasting

confidence: 59%