The effect of high-dose nitrogen plasma immersion ion implantation on silicone surfaces

Abstract

The effect of plasma immersion ion implantation (PIII) treatment on silicone surfaces was investigated by x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR-ATR), and scanning electron microscopy (SEM). Low-energy (at voltages of 4 and 8 kV) and high-fluence (8 × 10 17 cm −2) implantation of nitrogen was performed using an inductively coupled plasma source (ICP) at low pressure (∼0.03 Pa). The IR absorption spectra showed a significant decomposition in the CH 3 , Si-CH 3 , and C-F groups of the silicone surface after PIII treatment. The percentage of decomposition was dependent on the implantation energy. The XPS C 1s spectra of the PIII modified surfaces showed an increase in the polar carboxyl (O-C=O) groups and a decrease in the CF 3 groups. PIII treatment shifted the XPS Si 2p peak of silicone to a higher binding energy (around 103.2 eV) and the N 1s peak to lower binding energy (around 398.5 eV). The modified Si 2p, N 1s, and O 1s spectra suggest the formation of SiO x phases, silicon oxynitrides, and silicon nitrides on the silicone surface after PIII treatment.

EPDM Rubber Modified by Nitrogen Plasma Immersion Ion Implantation

“…The reason of folds is the stresses in the carbonized layer, which deform the surface layer at presence of elastic underneath layer [ 36 ]. Similar surface topography changes were observed for elastic polymers after ion beam treatment [ 27 , 37 , 38 ]. However, the observed topography of EPDM rubber after PIII is different in comparison with the EPDM surface etched in low voltage plasma treatment [ 26 ].…”

Surface Engineered Polymeric Biomaterials with Improved Biocontact Properties

“…Husein et al [89,90] establish that the ion implantation on polysiloxane surface from plasma source leads to an increase of the surface silanol groups similar to that when the same polymer is plasma or argon ion beam treated. Uncustomary differences in the cell sensitivity to similar on chemical composition polysiloxane surfaces, obtained by different irradiation methods are observed by some researchers [91] attributed to differences in the surface energy, especial electron structure and the corresponding electrical properties of the surface layer.…”

Si doped highly crystalline mesoporous In2O3nanowires: synthesis, characterization and ultra-high response to NOxat room temperature

“…This demonstrated the existence of the SiO x phase (x ¼ 1.94). 36 When the ratio of O : Si was lower than 2.0, oxygen vacancies existed, where such oxygen vacancies would give rise to the formation of a defect level. The defect level would then act as hole-traps, and thus promote charge transfer.…”