The effect of high-temperature treatment on the structural and magnetic changes in silicon crystals

Magnetic susceptibility of n- and p-Si single crystals containing thermodonors

“…Therefore, we deal with formation of the hardening paramagnetic centers that is shown by the orientation dependences χ(H). Of course, the appearance of these centers in the thermally treated Si samples within the higher temperature range (650-1100 °C) as in [11] and at the single-axis plastic deformation of n-Si(P) samples [12] should be expected. That is why, interpreting the experimental MS data in all these cases, the probability of appearance of such paramagnetic centers should be taken into account and their share in the measured MS value should be determined.…”

“…3 at H = 4.5 kOe. It should be noted that the nonlinear character of the dependences of χ(H) that show the magnetic ordering of certain paramagnetic centers was observed not only in n-Si(P) samples at the presence of doubly-charged TDs but also in the case of these crystals undergone TT in the temperature range of 650-1100 °C [11] and also in the samples plastically deformed at the temperatures 650-700 °C [12]. In all these cases, the main stage of sample preparation for measurements is the thermal treatment at a certain temperature.…”