The effect of Ho doping on the microstructure and optical properties of Ba0.65Sr0.35TiO3 thin films

Zhang, Tianjin; Wang, Jun; Zhang, Baishun; Pan, Ruikun; Wan, Neng

doi:10.1016/j.mee.2006.05.005

Cited by 7 publications

(2 citation statements)

References 17 publications

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“…[1][2][3][4]. According to the results of the previous investigations, the electrical properties such as dielectric constant, dielectric loss and leakage current of thin films depend on the deposition method, composition, dopant, electrode, microstructure, interfacial quality and thickness of the films.…”

Section: Introductionmentioning

confidence: 99%

Dielectric characteristics investigation of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ferroelectric thin films

Chen

Huang

2016

Integrated Ferroelectrics

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By the radio frequency (RF) magnetron sputtering methods, (Ba 0.7 Sr 0.3 )(Ti 0.9 Zr 0.1 )O 3 (BSTZ) ferroelectric thin films were deposited on the Pt/Ti/SiO 2 /Si(100) substrates. The crystal structural and microstructure of these thin films were analyzed by means of the XRD, SEM, and AFM. Moreover, the dielectric characteristics were also investigated by the C-V and J-E analyses. The optimal deposition parameters for these BSTZ thin films were: RF power is 160 W, oxygen concentration is 25%, substrate temperature is 580°C, and chamber pressure is 0.075 mPa. Under these optimal deposition conditions, the (111) and (110) oriented polycrystalline of the BSTZ thin films grow easily. And under a bias voltage of 0.5 MV/cm, the dielectric constant and leakage current density of the BSTZ thin films are 191 and 3×10 −8 A/cm 2 , respectively. In addition, under various measured temperatures (0 ∼ 80°C) and frequencies (100 kHz ∼ 1 MHz), all the dielectric constants remain almost unchanged. Compared to BSTZ thin films reported previously, in this study, the deposited thin films have the advantage of lower leakage current and hence are suitable for the applications of dynamic random access memory.

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Section: Introductionmentioning

confidence: 99%

Dielectric characteristics investigation of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ferroelectric thin films

Chen

Huang

2016

Integrated Ferroelectrics

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“…For cadmium wastewater processing, generally speaking there are two types of approaches: the first is precipitation; the second is a physico-chemical method. Flocculation is relatively simple and also one of the more important methods [1][2][3][4]. However, due to the complexity of production processes, heavy metal ions in wastewater with a certain degree of turbidity,often coexist with other metal ions, or contain complexing agents such as EDTA and other natural organic complexing agents.…”

Section: Introductionmentioning

confidence: 99%

The Study of Cadmium Wastewater Disposal by Heavy Metal Flocculant Polyhydroximic Acid

2012

AMR

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Polyhydroximic acid (PHA) with the function of heavy metal flocculant was made by compounding polyacrylamide, hydroxylamine hydrochloride and sodium hydroxide, to observe its effects on the cadmium wastewater disposal under different conditions (pH value, different organic complexing agents EDTA, triammonium citrate, glycocoll, humic acids and turbidity). The present study reaches the following results: (1) PHA has good effects on the removal of Cd2+ in wastewater; for the sample wastewater with a concentration of 25 mg•L-1, the removal rate of Cd2+ can reach 94%; (2) The removal rate of Cd2+ rise with the rise of pH values(4-8); (3) EDTA can obviously inhibit PHA’s removal rate of Cd2+; (4) Triammonium citrate can improve PHA’s removing ability of Cd2+. (5) Glycocoll and humic acids can obviously enhance the removing of Cd2+; (6) Turbidity-causing materials can promote the removal of Cd2+ and turbidity.

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The impact of oxygen partial pressure in modifying energy storage property of lanthanum doped multiferroic bismuth ferrite thin films deposited via pulsed laser deposition

Balmuchu

Radhika

Pamu

2023

Journal of Energy Storage

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The effect of Ho doping on the microstructure and optical properties of Ba0.65Sr0.35TiO3 thin films

Cited by 7 publications

References 17 publications

Dielectric characteristics investigation of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ferroelectric thin films

Dielectric characteristics investigation of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ferroelectric thin films

The Study of Cadmium Wastewater Disposal by Heavy Metal Flocculant Polyhydroximic Acid

The impact of oxygen partial pressure in modifying energy storage property of lanthanum doped multiferroic bismuth ferrite thin films deposited via pulsed laser deposition

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The effect of Ho doping on the microstructure and optical properties of Ba0.65Sr0.35TiO3 thin films

Cited by 7 publications

References 17 publications

Dielectric characteristics investigation of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3ferroelectric thin films

Dielectric characteristics investigation of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3ferroelectric thin films

The Study of Cadmium Wastewater Disposal by Heavy Metal Flocculant Polyhydroximic Acid

The impact of oxygen partial pressure in modifying energy storage property of lanthanum doped multiferroic bismuth ferrite thin films deposited via pulsed laser deposition

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Product

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Dielectric characteristics investigation of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ferroelectric thin films

Dielectric characteristics investigation of (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ferroelectric thin films