The stress-induced birefringence (or piezobirefringence) of amorphous Se has been measured a t room temperature for wavelengths between 1.15 and 0.77 pni. A 'bond model' is proposed to explain the long-wavelength photoelastic properties of this material. The dispersion in the piezobirefringence was fitted to the two-parameter phenomenological expression of Wemple and DiDomenico. The relaxation of the piezobirefringence under constant stress, and the recovery of the isotropy after return to zero stress have also been measured at room temperature. R o m the relaxation curves the birefringence relaxation time for the last Maxwellian element has been determined.
Int,roduct,ionThe application of stress, uniaxial or hydrostatic, to a crystalline solid has been one of the most powerful tools in the study of the mechanical, electrical, and optical properties of crystalline solids.3) Their application to non-crystalline solids, however, has been limited, one of the reasons being that many amorphous solids are prepared in the form of thin films which cannot be easily stressed. Amorphous Se (or a-Se) appears to be a very good candidate for measurements under stress. It can be prepared as a hard and brittle glass by quenching molten