The effect of ion implantation on epitaxial magnetic garnet thin films

Guzmán, Amador M.; Krafft, C.; Wang, Xubin; Kryder, M.H.

doi:10.1016/0167-5087(83)90929-8

Nuclear Instruments and Methods in Physics Research

1983

DOI: 10.1016/0167-5087(83)90929-8

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The effect of ion implantation on epitaxial magnetic garnet thin films

Amador M. Guzmán

C. Krafft

Xubin Wang

et al.

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Cited by 3 publications

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Optical effects of ion implantation

Townsend¹

1987

Rep. Prog. Phys.

285

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Ion implantation is a powerful technique for surface analysis and material modification and this review discusses the effects that specifically relate to optical properties of insulators. By selection of ion energy and ion dose one can inject trace impurities that control luminescence, generate optical absorption bands or complex defect aggregates, stimulate production of new crystalline phases or destroy crystallinity. Such property changes are valuable in diagnostic studies of defects and indeed the high rates of energy deposition along an ion track allow production of defect clusters or excited states which are otherwise unobtainable. Implantation invariably stimulates luminescence which provides a sensitive means of analysis to measure purity and near-surface defect concentrations.Post-implantation measurements reveal changes in many physical and chemical properties of the materials, Some, such as chemical reactivity, can increase a thousandfold, others such as birefringence, electro-optic and acoustic wave parameters are reduced. One major property which can be controlled is the refractive index; thus optical waveguides, and ultimately, complex integrated optical devices can be precisely defined by ion implantation.The review presents numerous examples of both diagnostic and industrial examples of ion implantation effects in insulators.

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Optical effects of ion implantation

Townsend¹

1987

Rep. Prog. Phys.

285

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Tuning of perpendicular magnetic anisotropy in Bi-substituted yttrium iron garnet films by He+ ion irradiation

Das,

Mansell,

Flajšman

et al. 2024

Phys. Rev. Materials

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Amorphization of Garnet by Ion Implantation

et al. 1983

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Amorphization by ion implantation has been investigated in films of (SmYGdTm)3Ga0.4Fe4.6O12 garnet by transmission electron microscopy, incorporating a special cross-sectioning technique. These films were produced by liquid phase epitaxy on (111) garnet substrates and subsequently implanted with ions of deuterium at 60 keV and doses ranging from 0.50 to 4.5×1016 D2+/cm2 and ions of oxygen at 110 keV and doses ranging from 0.95 to 8.6×1014O+/cm2. The amorphization process proceeds in separate stages involving the formation of isolated amorphous regions, merging of these regions into a continuous band and subsequent propagation of the amorphous band toward the implanted surface. Details of these processes are interpreted in terms of various atomic displacement mechanisms.

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The effect of ion implantation on epitaxial magnetic garnet thin films

Cited by 3 publications

References 15 publications

Optical effects of ion implantation

Optical effects of ion implantation

Tuning of perpendicular magnetic anisotropy in Bi-substituted yttrium iron garnet films by He+ ion irradiation

Amorphization of Garnet by Ion Implantation

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