The effect of LaNiO3 buffer layer thickness on the electric properties of Pb(Zr0.53Ti0.47)O3 thin films deposited on titanium foils

Effect of LaNiO3 buffer layer thickness on the microstructure and electrical properties of (100)-oriented BaTiO3 thin films on Si substrate

“…the dielectric constant decreases and the dielectric loss increases much more rapidly with increasing the measuring frequency. For example, when the frequency increases from 10 3 Hz to 10 [21,22]. The enhanced dielectric properties of BTO with the increase of LNO buffer layer thickness is suggested due to the combination of improved electrical properties of LNO and improved microstructural properties of BTO, such as larger grain size, better crystallization quality and overcome of internal defects concentration.…”

Effect of LaNiO3 electrodes and lead oxide excess on chemical solution deposition derived Pb(Zrx,Ti1−x)O3 films

“…Obtaining a dense and crystalline PZT phase at 500°C, is amongst the lowest reported values for PZT films in general and CSD films in particular. L. Che et al [21] annealed PZT over LNO for 30 min, but at 600°C. The lowest reported annealing temperature of PZT is 550°C for 30 min [19].…”

Improving the fatigue endurance of lead zirconate titanate thin films through PbO interfacial modification

“…Researchers have attempted to modify the interfaces in order to resolve the fatigue problem. For example, different buffer layers including PbZrO 3 [9][10], TiO x [11], LaNiO 3 [12], MgO [13], Bi 2 Ti 2 O 7 [14], PbO [15] and SiO 2 [15] were used. However, the interface imperfections are still not clearly understood.…”