The effect of metal-buffer bilayer drain/source electrodes on the operational stability of the organic field effect transistors

Karimi–Alavijeh, Hamidreza; Ehsani, Ali

doi:10.1016/j.tsf.2015.07.079

Cited by 8 publications

(5 citation statements)

References 33 publications

(38 reference statements)

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“…The voltage reference based on gold drain-source OFETs generates the lowest output voltage while the silver type shows the highest. The obtained results can be attributed to the difference in the threshold voltage of the OFETs which use different conductor types for the drain-source construction [24], where Ag has the highest OFET threshold value while Au shows the lowest.…”

Section: Resultsmentioning

confidence: 99%

“…So with all PMOS design, the output voltage can be made independent of the supply voltage, however, this achievement will make the output voltage completely dependent on the OFET threshold voltage. As it will be shown in the experimental results section, a drawback with this method is that since OFET devices will experience threshold voltage drifts with aging and over time due to the absorption of ambient contaminants [24], the produced output voltage will also suffer from some drifts over time. It should be noted that this limitation is not one specific to this design and currently all proposed integrated circuits in the literature based on OFET devices have a limited life span due to this threshold voltage drifts.…”

Section: Apvrg Circuitmentioning

confidence: 99%

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An organic, threshold voltage based, all PMOS, voltage reference generator for flexible sensor tags

Azimi¹,

Habibi²,

Karimi–Alavijeh³

2021

Flex. Print. Electron.

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The developments and advances achieved in organic semiconductors have promised lower costs for integrated circuit productions and also the fabrication of electronic circuits using printed technology on unconventional substrates such as plastic, clothing, and even skin. An important building block essential to most electronic circuits is a voltage, process, and temperature independent potential generator which can be used to bias amplifiers and produce a fixed reference for sensor devices. The generation of a voltage reference is also important for voltage regulators. Currently, most reported organic integrated circuits use only p-type OFETs in their circuits due to simpler fabrication procedures. Furthermore, air stable p-type organic semiconductors such as Pentacene and CuPc are well characterized. In this paper, a low power two stage all PMOS voltage reference generator is proposed. As properties such as threshold voltage value and device aging are dependent on the OFET structure, the type of device chosen for this purpose will have a direct impact on the circuit performance. Three different types of OFETs with silver, copper, and gold drain/source electrodes are studied in this work. Performance factors such as Line Sensitivity (LS), Temperature Coefficient (TC), power consumption, time constant, and output drifts of the fabricated integrated circuits are measured and reported to verify the characteristics of the proposed circuit. It is shown that the drain/source metal choice affects the threshold voltage dependent output potential of the reference generators.

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Section: Resultsmentioning

confidence: 99%

Section: Apvrg Circuitmentioning

confidence: 99%

An organic, threshold voltage based, all PMOS, voltage reference generator for flexible sensor tags

Azimi¹,

Habibi²,

Karimi–Alavijeh³

2021

Flex. Print. Electron.

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“…Gold electrode [ 70,71 ] is most widely used for charge injections. Other metals, such as silver, [ 72,73 ] aluminum, [ 74 ] copper, [ 75 ] and flexible transparent electrodes [ 76 ] are also usually used in OFETs. Gold is commonly used as electrodes because of its high WF and chemical stability, which matches the HOMO of p‐type OSCs in most cases, thus lowering the Φ B .…”

Section: Strategies For Reducing Rc In Ofetsmentioning

confidence: 99%

“…The insertion of a charge injection layer, namely buffer layer, at source‐drain electrode/semiconductor interface is another common method to improve contact performance. [ 74,112–114 ] Various materials have been used as buffer layers to date such as aryl‐functionalized graphene oxides (GOs), [ 45,90 ] molybdenum oxide (MoO 3 ), [ 42,74,112 ] vanadium oxide (VO x ), [ 113 ] tungsten oxide (WO 3 ) [ 115,117 ] and some inorganic salts. [119] Also organic compounds like TCNQ, [ 117 ] (deoxyribonucleic acid (DNA), [ 119,120 ] poly(methyl methacrylate) (PMMA), [ 121 ] subphthalocyanine chloride (SubPc), triphenyldiamine derivative (TPD), 4,40,400‐tris[3‐methylphenyl(phenyl)amino] triphenylamine (m‐MTDATA), [ 122 ] radical polymer poly(2,2,6,6‐tetramethylpiperidine‐1‐oxyl methacrylate) (PTMA) [ 123 ] etc.…”

Section: Strategies For Reducing Rc In Ofetsmentioning

confidence: 99%

Effect of contact resistance in organic field‐effect transistors

Shi

Liu

et al. 2021

Nano Select

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Contact resistance (RC) is universally present in organic field‐effect transistors (OFETs) and the performance of OFETs can be easily affected by RC, which will result in poor performances such as low mobility (μ), large threshold voltage (VT), and non‐ideal transfer/output characteristics. In this article, we provide a comprehensive review on the effects of RC in OFETs. We start with a brief introduction of the origin of RC and its effects on OFETs, followed by the commonly used methods for extraction of RC. Then, methods for reducing RC are thoroughly discussed. Especially, fabricating monolayer molecular crystal (MMC) OFETs is highlighted as one of the key solutions to reduce RC effectively. The final section describes the challenges in MMCs preparation and concludes with an outlook for further reducing RC to enhance the performances of OFETs.

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“…Applying a coupling agent forms the chemical interactions between the two phases [4,14,24]. In addition, using the polar solvents can significantly affect the quality of interface [24][25]. Another method which can adjust nanostructure of insulator-semiconductor interface is the annealing treatment process [7,[26][27][28].…”

Section: Introductionmentioning

confidence: 99%

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

Hashemi

Bahari

Ghasemi

2017

Applied Surface Science

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The effect of metal-buffer bilayer drain/source electrodes on the operational stability of the organic field effect transistors

Cited by 8 publications

References 33 publications

An organic, threshold voltage based, all PMOS, voltage reference generator for flexible sensor tags

An organic, threshold voltage based, all PMOS, voltage reference generator for flexible sensor tags

Effect of contact resistance in organic field‐effect transistors

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

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