The effect of morphology and surface composition on radiation resistance of heterogeneous material CdS-PbS

Malyar, I. V.; Stetsyura, S. V.

doi:10.1134/s106378261107013x

Cited by 8 publications

(10 citation statements)

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“…радационной, в частности радиаци-онной стойкости тонких пленок [2]. Преимуществом твердых растворов Pb x Cd 1−x S также является возможность плавного регулирования ширины за-прещенной зоны путем изменения со-става, а следовательно, оптических и электрофизических свойств.…”

Section: получение пленок твердых растворов системыunclassified

“…В связи с этим актуальной становится разра-ботка методов синтеза твердых раство-ров системы CdS-PbS, позволяющих расширить диапазон их составов. Из-вестно, что для получения указанных соединений используют, например, термическое испарение в вакууме спе-ченной шихты, состоящей из CdS и PbS [2], гидрохимическое осаждение [3][4][5][6][7], синтез с применением техноло-гий Ленгмюра -Блоджетт [8], метод спрей-пиролиза [9].…”

Section: получение пленок твердых растворов системыunclassified

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Preparation of CdS-PbS solid solutions thin films by modifying of the cadmium sulfide film surface when it exposed to an aqueous solution of lead salt

et al. 2014

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Section: получение пленок твердых растворов системыunclassified

Preparation of CdS-PbS solid solutions thin films by modifying of the cadmium sulfide film surface when it exposed to an aqueous solution of lead salt

et al. 2014

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“…As is known [9,10], this temperature corresponds to intense sensitization of CdS x Se 1 -x solid solutions and a phase transition from the sphalerite to wurtzite structure. Since the laser power density level used in our experiments can lead to much more pronounced changes in the temperature of semiconductor targets [3], the deposited energy can be spent for phase tran sitions that are manifested on the AFM images (Fig.…”

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confidence: 93%

Creating micron regions with modified luminescent properties and topology on CdS x Se1 − x films by laser annealing

et al. 2012

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There is a topical technological problem of con trolling the local properties of semiconductor films, on which it is necessary to create submicron regions with preset physicochemical properties of the surface layer. This task is important, in particular, for the creation of biochips with various functional groups grafted in cer tain regions of the sensitive surface [1, 2]. One possible way to solve this problem is via the controlled creation of an appropriate topological and potential relief on a semiconductor surface by means of local laser anneal ing. The mechanisms and consequences of high intensity laser beam action on semiconductors have been studied for a long time [3], and it has been estab lished that the results of this treatment can strongly vary, depending on the character of semiconductors and parameters of laser irradiation.The present Letter reports on the possibility of cre ating local surface regions with preset properties on a micron precise scale by means of rapid phase transi tions induced via laser beam in photosensitive semi conductor films of CdS x Se 1 -x solid solutions with thicknesses up to about 1 μm.The sample films were prepared by thermal deposi tion in vacuum using a charge containing 45 wt % CdS, 55 wt % CdSe, and a doping additive of 0.1 wt % CuCl 2 . The substrates were made of polished glass with a surface roughness not exceeding 12 nm. As is known, CdS and CdSe components form a continuous series of solid solutions, which makes it possible to obtain fine grained films with homogeneous grain size distri bution and uniform composition. In addition, the presence of CdSe decreases the melting and sublima tion temperatures of the mixture as compared to those of pure CdS.The experiments were performed in an Ntegra Spectra scanning probe microscope (NT MDT, Zelenograd). The surface relief was studied by atomic force microscopy (AFM) in a tapping mode using an NSG01 (NT MDT) silicon cantilever. The samples were processed using a solid state laser operating at 473 nm with a maximum power of 35 mW in the objec tive focus plane. At a laser beam spot diameter of 0.7 μm in the focus of a 100x/0.90 M plan FLN objec tive of an Olympus LX 71 microscope, the maximum radiation power density in the incident beam was about 140 mW/μm 2 in a continuous irradiation regime. The radiation power in the course of investiga tions could be varied in a range of 35 μW-345 mW (accurate to within 10%) using a controlled neutral optical filter. Simultaneously with the laser annealing process, it was possible to measure the photolumines cence (PL) spectra of samples, which allowed changes in their properties to be monitored in situ. The PL spectra were measured by a Solar TII spectrometer incorporated in the Ntegra Spectra instrument. For the given laser, the PL spectra were recorded in a 480-1050 nm wavelength range. Figure 1 shows variations of the PL spectrum of a sample film in the course of laser annealing. The spec tra were measured in the following sequence. First, the PL spectrum was measured at a minimu...

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“…This gives the opportunity to smoothly control the width of the energy gap and, consequently, to change the optical and electrophysi cal properties of the material by changing its composi tion. The introduction of lead sulfide into the structure of the wide gap semiconductor CdS also increases the radiation stability of thin films of the latter [2]. How ever, the lead and cadmium sulfides have a limited mutual solubility and form substitutional solid solu tions on the CdS side only at relatively small amounts of the substituting component.…”

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confidence: 98%

“…In particular, in [7] the film of PbSe was modified (with the obtaining of substitu tional solid solutions) by treatment in a solution of tin chloride SnCl 2 and in [8], by the treatment in an aqueous solution of the mercury salt Hg(NO 3 ) 2 The holding of the layer of PbS in the aqueous solution of the thiocarba mide complex of silver made it pos sible to obtain films of the substitutional solid solu tions of Ag x Pb 1 -x S [9]. The formation of solid solu tions has been revealed also upon the immersion of CdS films into an aqueous solution of the silver salt AgNO 3 containing its thiosulfate complexes [10].…”

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Synthesis of films of solid solutions Cd x Pb1 − x S by the method of ion-exchange substitution

Маскаева

Forostyanaya

Марков

et al. 2015

Russ. J. Inorg. Chem.

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The possibility of obtaining films of substitutional solid solutions in a sulfide system via ionic exchange at the interface between the CdS film and the aqueous solution of a lead salt has been shown. The composition, structure, and morphology of freshly deposited films of CdS, PbS, and CdS layers held for 60-540 min at 353-368 K in an aqueous solution of lead acetate have been studied. It has been established by the methods of Raman spectroscopy (RS) and glancing angle X ray diffraction (GAXRD) that, due to ion exchange processes, the formation of supersaturated substitutional solid solutions Cd x Pb 1 -x S (x ≤ 0.31) occurs in the film, the cadmium content in which decreases gradually over the film thickness.

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The effect of morphology and surface composition on radiation resistance of heterogeneous material CdS-PbS

Cited by 8 publications

References 1 publication

Preparation of CdS-PbS solid solutions thin films by modifying of the cadmium sulfide film surface when it exposed to an aqueous solution of lead salt

Preparation of CdS-PbS solid solutions thin films by modifying of the cadmium sulfide film surface when it exposed to an aqueous solution of lead salt

Creating micron regions with modified luminescent properties and topology on CdS x Se1 − x films by laser annealing

Synthesis of films of solid solutions Cd x Pb1 − x S by the method of ion-exchange substitution

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