2007
DOI: 10.1088/0953-2048/20/8/018
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The effect of nano-alumina on structural and magnetic properties of MgB2superconductors

Abstract: Nano-Al2O3 doped Mg1−xAlxB2 with 0≤x≤6% were synthesized by solid state reaction at 750 °C in Fe tube encapsulation under a vacuum of 10−5 Torr. Resistance measurement shows that the Tc decreases with x and zero resistivity for x = 0 and 6% are obtained at 38 and 35 K, respectively. XRD measurement shows that the lattice parameter and cell volume also decrease monotonically with increasing doping levels. From this we infer that the Al has been substituted in the lattice of MgB2 at Mg sites. Resistivity me… Show more

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Cited by 25 publications
(18 citation statements)
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“…For example, in the SiC-doped and C-doped samples, the SiC-doping and C-doping allows C substitution for boron, 21 whiles in the Al 2 O 3 -doped sample, Mg replaced by Al was widely reported. 22,23 Although in SiO 2 -doped sample, Si is doped into the MgB 2 lattice cell leading to the formation of Mg 2 Si particles, 24 SiO 2 is regarded as a real impurity like MgO, which deteriorates the superconductivity by changing the microstructure and the grain connectivity. 25 The addition of Si 3 N 4 also led to the formation of Mg 2 Si, which is similar to the results of most other silicon compounds doping.…”
Section: B Origin Of the Low-field Upturn Of ⌬T Cmentioning
confidence: 99%
“…For example, in the SiC-doped and C-doped samples, the SiC-doping and C-doping allows C substitution for boron, 21 whiles in the Al 2 O 3 -doped sample, Mg replaced by Al was widely reported. 22,23 Although in SiO 2 -doped sample, Si is doped into the MgB 2 lattice cell leading to the formation of Mg 2 Si particles, 24 SiO 2 is regarded as a real impurity like MgO, which deteriorates the superconductivity by changing the microstructure and the grain connectivity. 25 The addition of Si 3 N 4 also led to the formation of Mg 2 Si, which is similar to the results of most other silicon compounds doping.…”
Section: B Origin Of the Low-field Upturn Of ⌬T Cmentioning
confidence: 99%
“…In order to further find out evidences, the magnetic field dependence of Jc at different temperature has been calculated under different doping level. [6] ), there are some jumps reflected at 10K (nearby 1T) and 20K (nearby 3.5T) for 6% doped and pure sample, respectively as shown in the Figure 4. In addition, at 30K temperature the 4% and 6% Al doped sample depicts some jumps as well close to 0.25T field.…”
Section: Resultsmentioning
confidence: 83%
“…The present study described the detailed analysis of the Jc and normalized pinning force, f as a function of magnetic field and temperature for nano Al doped MgB2 sample using the simple scaling law described above. The difference between the previous report [6] and present is that in the prior report only magnetic behavior have been analyzed but in the present report I have calculated the Jc as well as the pinning mechanism for nano Al doped MgB2. In order to examine the dominant pinning mechanism for nano Al doped MgB2 sample this scaling law describes the significant results.…”
Section: Introductionmentioning
confidence: 73%
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“…Enormous efforts have been made on the way to the fabrication of high-quality MgB 2 superconductor. In order to enhance the J c , H c2 , and the irreversibility field (H irr ), enormous chemical doping [13][14][15][16][17][18][19][20][21], different routes [22][23][24][25], and thermo-mechanical processing techniques [26,27] have been adopted. Remarkably, chemical doping particularly using nano-particle doping has revealed the great promise in improving the J c -H behavior due to form a high density of nano-inclusions in MgB 2 matrix and provides a strong flux pinning force (F p ).…”
Section: Introductionmentioning
confidence: 99%