The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth

Abstract

We find the nanoscale steps on Si (1 1 1) surface can influence the self-catalyzed position-controlled InAs nanowire growth by metal-organic chemical vapor deposition (MOCVD). The nanoscale steps, made of the photoresist residues induced by incomplete-development after electron beam lithography, show a strong effect on the size and density of InAs nanowire nucleation. The phenomena are explained by a proposed model that the nanoscale steps on Si (1 1 1) surface can block the diffusion of Indium atoms thus influencing the formation of Indium droplets. Our result is helpful for understanding the growing mechanism and growing InAs nanowires with precise position-control.

Double‐layer resist method to improve descum result when removing negative photoresist

“…As shown in Fig. 2, the black wrinkle appeared in all three cases, which was due to the fact that the organic solvent in the developer enters the molecular chain of resist, causing the swell of negative photoresist [27], particularly in the double resist area. Due to the poor adhesion of the double resist, the top layer is separated from the bottom layer.…”

(Invited) The Scaling-Down and Performance Optimization of InAs Nanowire Field Effect Transistors

“…We report the first all-metal electrodes vertical GAA FET fabrication process, which is not only better compatible with Si technology, but also utilizes separated electrodes to avoid the large parasitic effects, as shown in Figure 4 (16). Nanohole arrays are fabricated on Si substrate to be the mask for NW growth (43,44). Then, InAs NWs are self-catalyzed grown by metal-organic chemical vapor deposition (MOCVD) (45,46).…”