The effect of Ni(CH3COO)2 post-treatment on the charge dynamics in p-type NiO dye-sensitized solar cells

Liu, Qian; Wei, Lifang; Yuan, Shuai; Ren, Xiangshi; Wang, Zhuyi; Zhang, Meihong; Shi, Liyi; Li, Dongdong

doi:10.1007/s10853-015-9221-8

Cited by 18 publications

(13 citation statements)

References 34 publications

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“…725 A Ni(CH 3 COO) 2 treatment to the NiO film was also shown to suppress the hole recombination and led to a 31.3% improvement in the photovoltaic performance. 726 Insulating coatings of Al 2 O 3 and TiO 2 on the NiO surface increase the recombination resistance and increase the V OC and efficiency of the device. 570,571 Chemical treatments such as immersing in NaBH 4 or NaOH have also been used to improve the V OC and FF by addressing the Ni 3+ surface states and decreasing recombination.…”

Section: Photoelectrochemistry and Photovoltaic Performancementioning

confidence: 99%

Dye-sensitized solar cells strike back

et al. 2021

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Section: Photoelectrochemistry and Photovoltaic Performancementioning

confidence: 99%

Dye-sensitized solar cells strike back

et al. 2021

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“…This treatment is known to increase the particle necking and to decrease the concentration of recombination sites on NiO surface. [59] It is known that pyridine binds to QDs and can act as a ligand of PbS. [60,61] Accordingly, the above prepared PbS sensitized NiO film was soaked in a solution of py-NDI for two hours in order to attach the ligand to the PbS nanocrystal.…”

Section: Preparation Of the Hybrid System: Nio/mpa/pbs/py-ndimentioning

confidence: 99%

Improved efficiency of PbS quantum dot sensitized NiO photocathodes with naphthalene diimide electron acceptor bound to the surface of the nanocrystals

Raïssi¹,

Sajjad²,

Farré³

et al. 2018

Solar Energy Materials and Solar Cells

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Hybrid materials combining a wide bandgap metal oxide semiconductor, metal chalcogenide nanocrystals and molecular systems represent very attractive materials for fabricating devices with new function or improved photoelectrochemical performances. This study deals with sensitization of NiO, which is a p-type semiconductor, by quantum dots (QDs) of PbS with an average diameter of 3 nm. The PbS QDs were attached to the monocrystalline film of NiO by mercaptopropionic acid linker and were subsequently capped with methyl-pyridine naphthalene diimide (NDI) units to prepare quantum dot sensitized solar cells (p-QDSSCs) on NiO electrodes. Time-resolved photoluminescence measurements of the PbS emission were used to determine the rate constants for charge transfer from the PbS exciton to the NiO, cobalt based redox mediator and NDI. Notably, it was shown that NDI quenches the PbS exciton by electron transfer with a quite fast rate constant (6.9 x 10 7 s -1 ). The PbS QDs sensitized NiO films were finally used to fabricate solar cells with tris(4,4'-ditert-butyl-2,2'bipyridine) cobalt(III/II) as redox mediator. It was observed that the presence of NDI on PbS improved the photovoltaic performance by 50% relative to that of cells without NDI, leading to a device with the following characteristics: Jsc = 5.75 mA/cm 2 , Voc = 226 mV, ff = 34% and PCE = 0.44%. This study demonstrates that photogalvanic processes can be a productive pathway to better performing sensitized p-type semiconductor for p-QDSSC. In other words, photoinduced electron transfer from the QDs

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“…1g, 26 Finally, the sintered NiO films were soaked into an ethanolic solution of nickel acetate to diminish the surface nickel oxide recombination sites and to improve the NiO nanoparticles necking. 27 The redox couple used in this study was the cobalt complexes: tris (4,4'-ditert-butyl-2,2'-bipyridine)…”

Section: Photovoltaic Performances In P-dsscsmentioning

confidence: 99%