2007
DOI: 10.1016/j.jallcom.2006.07.104
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The effect of NiO doping on the structure, magnetic and magnetotransport properties of La0.8Sr0.2MnO3 composite

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Cited by 38 publications
(16 citation statements)
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“…[ 53 ] It should be noted that the decrease of T C can be explained by other reasons, such as the small radial grain size or the ultra-thin thickness of the shell-LSMO, Ni-O-Mn magnetic interaction at the interface. [ 54,55 ] Moreover, the NiO nanoparticles increase the magnetically disordered states and change the Mn-O-Mn bond length and angle, and therefore the exchange energy decreases. The magnetic hysteresis loops normalized by the maximal magnetization at 5 K , recorded after fi eld cooling (FC) at 0.4 T from 340 K down to the measurement temperature, are shown in Figure 5 b.…”
Section: Resultsmentioning
confidence: 99%
“…[ 53 ] It should be noted that the decrease of T C can be explained by other reasons, such as the small radial grain size or the ultra-thin thickness of the shell-LSMO, Ni-O-Mn magnetic interaction at the interface. [ 54,55 ] Moreover, the NiO nanoparticles increase the magnetically disordered states and change the Mn-O-Mn bond length and angle, and therefore the exchange energy decreases. The magnetic hysteresis loops normalized by the maximal magnetization at 5 K , recorded after fi eld cooling (FC) at 0.4 T from 340 K down to the measurement temperature, are shown in Figure 5 b.…”
Section: Resultsmentioning
confidence: 99%
“…The enhanced low-field magnetoresistance (LFMR) is generally thought to be extrinsic in nature and ascribed to the spin-polarized tunneling of conduction electrons through grain boundaries as proposed by Hwang et al [9]. These secondary insulators include Co 3 O 4 [10], glass [11], MgO [12], CuO [13], V 2 O 5 [14], ZrO 2 [15], Fe 2 O 3 [16], NiO [17], PMMA [18] and CuMn 2 O 4 [19]. These results suggest that the insulating boundary or the barrier layer is important to enhance the MR effect.…”
Section: Introductionmentioning
confidence: 99%
“…Nowadays, researchers are focusing on how to obtain a large value of the MR at a low field and room temperature in order to satisfy practical applications. Many attempts have been made to enhance the low field magnetoresistance (LFMR) effect of perovskite manganites by mixture of the CMR materials with secondary phases including insulators [3][4][5][6][7][8], magnetic materials [9][10][11][12][13][14], or metals [14][15][16][17][18][19]. However, the mixture of the CMR material with the insulating grains commonly results in large increase of resistivity and downshift of metal-insulator transition, which limits the practical applications for the circuitmatching requirement.…”
Section: Introductionmentioning
confidence: 99%