The effect of nitrogen on the growth, morphology, and crystalline quality of MPACVD diamond films

Asmussen, J.; Mossbrucker, J.; Khatami, Saeid; Huang, Wenxi; Wright, Brian; Ayres, Virginia M.

doi:10.1016/s0925-9635(98)00371-9

Cited by 33 publications

(22 citation statements)

References 7 publications

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“…The amount of nitrogen present in the reaction mixture has a large influence on the deposition process and the deposited diamond. Several authors have studied the effect of nitrogen addition during diamond CVD [1][2][3][4][5][6][7] and it has been found that the addition of small amounts of nitrogen leads, among other things, to an increase of the deposition rate 4,7 and a preferred ͕100͖ texture. 1,2,5,7,8 Despite the considerable number of studies on the effects of nitrogen addition during diamond CVD processes, it is not clear what nitrogen-containing species is or are reponsible for the observed changes.…”

Section: Introductionmentioning

confidence: 99%

Relation between gas phase CN radical distributions, nitrogen incorporation, and growth rate in flame deposition of diamond

Stolk

Herpen

Meulen

et al. 2000

Journal of Applied Physics

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Influence of nitrogen on diamond growth in oxyacetylene combustion chemical vapor deposition J. Appl. Phys. 92, 4095 (2002); 10.1063/1.1502925 Spatial distributions of atomic hydrogen and C 2 in an oxyacetylene flame in relation to diamond growth Radical density measurements in an oxyacetylene torch diamond growth flame Controlled amounts of nitrogen were added during oxyacetylene flame deposition of diamond to investigate the possible role of the CN radical in the effects of nitrogen addition. CN radical distributions were visualized using two-dimensional laser induced fluorescence ͑LIF͒ and compared with nitrogen incorporation into the layer and with the diamond growth rate, which were measured by means of cathodoluminescence ͑CL͒ and optical microscopy, respectively. For the studied range of nitrogen flows, it was found that the CN LIF signal in the center of the flame is linearly dependent on the added amount of nitrogen. Diamond deposition in the central region is mainly influenced by the deposition parameters, whereas deposition in the outer zone is largely determined by the interaction of the flame with the ambient; the annulus of enhanced growth is affected by both the deposition parameters and the ambient. By a simple consideration, in which the growth rate is separated in nitrogen dependent and independent contributions, an observed positional difference between CN LIF and growth rate maxima can be explained. Comparison of the CN LIF signal, the CL signal and the diamond deposition rate indicates that CN ͑or a closely related species͒ may be the species or one of the main species responsible for the effects of nitrogen addition during oxyacetylene flame deposition of diamond.

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Section: Introductionmentioning

confidence: 99%

Relation between gas phase CN radical distributions, nitrogen incorporation, and growth rate in flame deposition of diamond

Stolk

Herpen

Meulen

et al. 2000

Journal of Applied Physics

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“…The multifarious roles of nitrogen addition into CH 4 /H 2 plasma on tailoring the growth of CVD diamond films ranging from large-grained 100 textured to fine grained nanocrystalline have been demonstrated depending either on the amount of N 2 addition or on the other growth parameters (for example, pressure, power, temperature, and methane . [12][13][14][15][16][17][18] For instance, trace amounts of nitrogen addition can facilitate the formation of high-quality large-grained 100 textured diamond at low pressure (N 2 10-200 ppm, CH 4 /H 2 0.5-2%, substrate temperature T subs ∼ 800 C, pressure 50 Torr), 12 while much higher N 2 concentration about 4% has been employed to deposit NCD (a gas mixture of CH 4 /H 2 /N 2 with flow rates of 2∼15/190/8 sccm, respectively, the microwave power was varied between 550 W and 1000 W, the reactant pressure was altered in the range of 13-28 Torr, and the substrate temperature was maintained at 800 C. 18 In this work, we report that NCD films can be produced by employing a new growth parameter window, i.e., using medium amount of N 2 addition (say, 0.24%) under a conventional condition for the growth of a high quality large grained polycrystalline diamond film, say, high microwave power 3000 W, high pressure 105 Torr, 4% methane in H 2 , and substrate surface temperature ∼750 C. Furthermore, by overlapping a small silicon slice on a large silicon wafer of 5.08 cm in diameter to achieve two different substrate temperatures in one single deposition run, both a NCD film grown at low temperature and a 100 textured largegrained diamond film deposit at high temperature can be prepared simultaneously. These new results demonstrate that distinct growth modes were involved or coupled effect of nitrogen addition and temperature happened.…”

Section: Introductionmentioning

confidence: 99%

Role of Nitrogen Additive and Temperature on Growth of Diamond Films from Nanocrystalline to Polycrystalline

Chunjiu¹,

José²,

Neves³

et al. 2010

J. Nanosci. Nanotech.

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In this work, the coupled effect of nitrogen addition into CH4/H2 mixtures and surface temperature on diamond growth ranging from large grained polycrystalline to fine-grained nanocrystalline were investigated. Moreover a new growth parameter window for simultaneous growth of nanocrystalline diamond (NCD) and {100} textured large-grained diamond films was developed by using a high power high pressure 5 kW microwave plasma assisted chemical vapor deposition (MPCVD) reactor. Scanning electron microscope (SEM), Raman spectroscopy, and X-ray diffraction (XRD) are employed to characterize the morphology, crystalline quality and texture of the diamond samples. Our results can be grouped by two catalogs: First, deposition run without and with 0.24% N2 addition, while keeping all the other parameters constant, resulted in a high quality transparent large-grained polycrystalline diamond film and a NCD film, respectively. This result clearly evidences nitrogen induced nanocrystallinity. Then, two different substrate surface temperatures were obtained by overlapping a small silicon slice on the top centre of a large silicon wafer of 5.08 cm in diameter in only one deposition run using 0.24% N2 addition and the same set of parameters as the previous runs. From this growth run, a NCD film of growth rate around 2.3 microm/h was obtained at low temperature, while a {100} textured large-grained diamond film of much higher growth rate about 10.4 microm/h was grown at high temperature. These results not only confirm the reproducibility of NCD by N2 addition, but also indicate that distinct growth modes were involved at different substrate temperatures with 0.24% nitrogen addition, or coupled effect of nitrogen addition and temperature on the growth of CVD diamond films happened. Finite element method (FEM) analysis was employed to simulate the temperature gradient and distribution on these two samples, and based on this simulation and other simulation results in the literature, the growth mechanism is briefly discussed.

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“…Because of these promising properties, a-CN:H has been considered for applications such as hard coating [1], solar cell passivation [2], biocompatible coating [3], and as a buffer layer organic photo-detector [4]. The a-CN:H films are prepared by various methods such as pulsed laser deposition [5], ion beam deposition [6], sputtering [7], plasma-enhanced chemical vapor deposition (PECVD) [8], electron cyclotron resonance chemical vapor deposition (ECRCVD) [9], microwave plasma-assisted chemical vapor deposition (MPACVD) [10] and hot-wire chemical vapor deposition (HWCVD) [11]. HWCVD is a promising deposition technique that permits both carbon and silicon based alloy films having superior structural and electronic properties to those prepared by conventional PECVD at high deposition rate and low substrate temperatures [12,13].…”

Section: Introductionmentioning

confidence: 99%

Effect of H2 dilution on a-CN:H films deposited by hot-wire chemical vapor deposition

Swain

Hwang

2009

Applied Surface Science

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The effect of nitrogen on the growth, morphology, and crystalline quality of MPACVD diamond films

Cited by 33 publications

References 7 publications

Relation between gas phase CN radical distributions, nitrogen incorporation, and growth rate in flame deposition of diamond

Relation between gas phase CN radical distributions, nitrogen incorporation, and growth rate in flame deposition of diamond

Role of Nitrogen Additive and Temperature on Growth of Diamond Films from Nanocrystalline to Polycrystalline

Effect of H2 dilution on a-CN:H films deposited by hot-wire chemical vapor deposition

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