The effect of noble gases on the formation of CVD diamond film

Effect of argon addition on the growth of thick single crystal diamond by high‐power plasma CVD

“…In order to clarify the effect of argon addition, OES measurements were carried out in the same operating conditions as those used for SCD growth. Argon addition was found to strongly affect the optical emission through an increased contribution from C 2 Swan system (Δ ν = 0) centred around 516 nm, in consistency with the results reported by Shih et al 5. The plasma exhibits a bright green coloration with a slightly larger size for the highest concentration as shown in Fig.…”

“…In conventional low‐power PACVD, substituting of H 2 by an increasing amount of argon in the H 2 /CH 4 gas mixture has been reported to strongly affect the crystal size of polycrystalline diamond (PCD) films 3–6. Ultra‐nanocrystalline diamond (UNCD) films are thus usually grown using up to 96% of Ar 7.…”

Growth kinetics of diamond film with bias enhanced nucleation and H2/CH4/Ar mixture in a hot-filament chemical vapor deposition system

“…In the present case, similar effects are seen with low dilution of argon (7 vol%) as compared to those reported with higher dilution (up to 95.5%) [2,3,5,6]. In case of microwave plasma CVD, the catalytic reactions that may occur due to the highly excited state of argon [3] or to the increase in the super-saturation of reactor by hydrogen ions due to the increase of plasma electron density are responsible for the increase in growth rate [3,7].…”

Modeling of chemical processes in the low pressure capacitive radio frequency discharges in a mixture of Ar/C2H2

“…Noble gases such as argon and neon are often used as main background gases for hydrocarbon mixtures as their presence changes morphology of diamondlike carbon films and leads to a fewer crystalline defects. 4,5 Besides that gas discharges in argon-hydrocarbon mixtures have been effectively used for growth of vertically aligned carbon nanostructures and discharge properties for this process were analyzed. [6][7][8] Plasmochemical processes taking place in the CCRF discharge in a hydrocarbon mixture result in the creation of reactive and neutral species that in its turn leads to film growth on a wafer and to the formation of nanoparticles in the discharge volume.…”