The effect of O2 plasma post-treatment on atomic layer deposited TiO2 thin films

Kim, Byunguk; Kang, Taeseong; Song, Seokhwi; Jung, Chanwon; Lee, Jung-Ho; Cheon, Seonghak; Jeon, Hyeongtag

doi:10.1016/j.vacuum.2022.110957

Cited by 15 publications

(3 citation statements)

References 32 publications

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“…Before friction testing the XPS peaks were mainly caused by bonding between metal and Si. After sliding testing at RT, the peaks at 464.9 and 459.2 eV originate from Ti 2 p 1/2 and Ti 2 p 3/2 of Ti 4+ in TiO 2 , 70 respectively. The signals observed at 524.1 and 516.6 eV correspond to V 2 p 1/2 and V 2 p 3/2 peaks of V 5+ in V 2 O 5 71 .…”

Section: Resultsmentioning

confidence: 99%

High‐entropy (Ti_0.2V_0.2Nb_0.2Mo_0.2W_0.2)Si₂ with excellent high‐temperature wear resistance

Li,

Chen,

Fan

et al. 2023

J Am Ceram Soc.

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The oxidation products (MoO3 and V2O5) have low melting points and tend to sublimate at high temperatures despite that MoSi2 and VSi2 may possess good self‐lubricating properties. To cope with this challenge, a high‐entropy transition metal disilicide was designed in this work in which transition metal elements that could form high melting point oxides were deliberately added. The high‐entropy (Ti0.2V0.2Nb0.2Mo0.2W0.2)Si2 (HE‐MSi2) with hexagonal structure was successfully prepared by SPS using Ti, V, Nb, Mo, W, and Si powders as the initial materials in this work. The HE‐MSi2 presents a high hardness (11.8 ± 0.4 GPa) and elastic modulus (387.2 ± 46.8 GPa). In particular, its hardness is higher than that of the corresponding disilicides. Noteworthy, HE‐MSi2 demonstrated superior wear resistance when compared to Mo‐Si‐based ceramics (such as MoSi2, Mo5Si3, and Mo5SiB2), high‐entropy carbides (such as (MoTaWVTi)C, (HfMoNbTaTi)C, and (TiVNbMoW)4.375, and traditional single‐phase ceramics (including Sialon, Si3N4, Al2O3, SiC, and ZrO2). Meanwhile, at a high temperature of 600°C, the friction coefficient and wear rate were reduced to 0.64 ± 0.05 and (1.88 ± 0.15)×106 mm3/N·m, respectively. The preferential oxidation of different elements of the HE‐MSi2 was validated through systematical characterization of composition evolution, which was dominantly impacted by high temperature and friction induction.

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Section: Resultsmentioning

confidence: 99%

High‐entropy (Ti_0.2V_0.2Nb_0.2Mo_0.2W_0.2)Si₂ with excellent high‐temperature wear resistance

Li,

Chen,

Fan

et al. 2023

J Am Ceram Soc.

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“…The O 1s spectra show dramatically increased hydroxyl group (531.6 eV) on the TiO 2 surface after the plasma treatment, which was supported by the enhanced hydrophilicity (Figure S7). , The Ti 2p spectra (Figure c) indicate that the Ti(III) (457.5 eV and 463.2 eV) almost disappeared after plasma treatment, leaving only the Ti(IV) (458.5 eV and 464.3 eV) signal of TiO 2 . , In addition, the Cl 2p spectra (Figure d) show that the Cl residual induced by the TiCl 4 -involving atomic layer deposition (ALD) process significantly reduced after the plasma treatment. , In order to identify the primary contributor, we conducted a wet etching to the plasma-treated TiO 2 substrate using NaOH solution to eliminate Cl and unveil the surface with Ti(III) defects and sparse hydroxyl groups by removing the outermost TiO 2 layer (Figures S8–S9). The resulting TiO 2 led to a deposition rate as low as 0.175 Å·min –1 , indicating weak photocatalytic reactivity (Figure S10).…”

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confidence: 99%

“…42,43 The Ti 2p spectra (Figure 3c) indicate that the Ti(III) (457.5 eV and 463.2 eV) almost disappeared after plasma treatment, leaving only the Ti(IV) (458.5 eV and 464.3 eV) signal of TiO 2 . 43,44 In addition, the Cl 2p spectra (Figure 3d) show that the Cl residual induced by the TiCl 4 -involving atomic layer deposition (ALD) process significantly reduced after the plasma treatment. 45,46 In order to identify the primary contributor, we conducted a wet etching to the plasma-treated TiO 2 substrate using NaOH solution to eliminate Cl and unveil the surface with Ti(III) defects and sparse hydroxyl groups by removing the outermost TiO 2 layer (Figures S8− S9).…”

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confidence: 99%

Photocatalytic Surface Initiation for Area-Selective Chemical Vapor Deposition of Polymer Thin Film

Shen,

Qiu,

Huang

et al. 2024

ACS Materials Lett.

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Nonlithographic patterning of polymer thin films enables various applications spanning from soft electronics to biomedical engineering. Developing area-selective deposition (ASD) for polymers could achieve self-aligned polymer growth, fostering the generation of complex nanostructures and device configurations with enhanced precision and versatility. However, due to the rapid radical propagation in chain reactions, achieving area-selective radical polymerization in all-dry processes still represents a huge challenge. Here, we report a photocatalytic surface-initiated chemical vapor deposition method. Localized radical generation on the TiO 2 surface enabled ASD of a poly(glycidyl methacrylate) (pGMA) thin film. Increasing hydroxyl groups and eliminating Ti(III) defects on the TiO 2 surface by the O 2 plasma pretreatment were found to be crucial to promote the photocatalytic initiation efficiency. Moreover, we obtained area selectivity of up to 92.2% on prepatterned TiO 2 /SiO 2 substrates with pGMA film thickness over 10 nm on TiO 2 . Our work offers placement control over chain-growth polymers, providing new opportunities for bottom-up nonlithographic nanofabrication.

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Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO₂

Parida,

Luong,

Das

et al. 2024

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A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random‐access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt‐based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self‐assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag⁺ ion migration for reseting the voltage‐controlled resistive states. This approach addresses the endurance/retention trade‐off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature‐driven OV modulation as a tool for multi‐bit data storage. These findings provide a blueprint for developing high‐performance oxide‐based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low‐power, high‐density memory technologies.

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The effect of O2 plasma post-treatment on atomic layer deposited TiO2 thin films

Cited by 15 publications

References 32 publications

High‐entropy (Ti_0.2V_0.2Nb_0.2Mo_0.2W_0.2)Si₂ with excellent high‐temperature wear resistance

High‐entropy (Ti_0.2V_0.2Nb_0.2Mo_0.2W_0.2)Si₂ with excellent high‐temperature wear resistance

Photocatalytic Surface Initiation for Area-Selective Chemical Vapor Deposition of Polymer Thin Film

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO₂

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The effect of O2 plasma post-treatment on atomic layer deposited TiO2 thin films

Cited by 15 publications

References 32 publications

High‐entropy (Ti0.2V0.2Nb0.2Mo0.2W0.2)Si2 with excellent high‐temperature wear resistance

High‐entropy (Ti0.2V0.2Nb0.2Mo0.2W0.2)Si2 with excellent high‐temperature wear resistance

Photocatalytic Surface Initiation for Area-Selective Chemical Vapor Deposition of Polymer Thin Film

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Contact Info

Product

Resources

About

High‐entropy (Ti_0.2V_0.2Nb_0.2Mo_0.2W_0.2)Si₂ with excellent high‐temperature wear resistance

High‐entropy (Ti_0.2V_0.2Nb_0.2Mo_0.2W_0.2)Si₂ with excellent high‐temperature wear resistance

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO₂