The effect of porous structure of PMMA tunneling dielectric layer on the performance of nonvolatile floating-gate organic field-effect transistor memory devices

Yi, Moonsuk; Shu, Jingkun; Wang, Yizheng; Ling, Haifeng; Song, Chunyuan; Wen, Li; Xie, Linghai; Huang, Wei

doi:10.1016/j.orgel.2016.02.034

Cited by 47 publications

(38 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The sunken regions on the surface of NMAI layer [ 22 ] indicates thinner local film than the surrounding areas, which provide higher possibility for the tunneling of holes from perovksite to HTL. [ 49 ] Atomic force microscopy (AFM) images (Figure 2C,D) also showed that the NMAI layer covered the whole perovskite film. In addition, AFM results show that the root‐mean‐square (RMS) roughness of the film is notably reduced from 15.5 to 8.93 nm after NMAI treatment, which will improve the contact with HTL.…”

Section: Resultsmentioning

confidence: 99%

Efficient Perovskite Solar Cells by Reducing Interface‐Mediated Recombination: a Bulky Amine Approach

Liang

Luo

et al. 2020

Advanced Energy Materials

230

199

View full text Add to dashboard Cite

meantime, the ease of the solution process at low temperature renders this technology up-and-coming for large-scale low-cost manufacture. However, these solution-processed perovskite films are usually polycrystalline, which readily form defects at the grain boundaries and on the surface of the films. [1][2][3][4][5][6] Such defects are the center of non-radiative recombination of photo-generated electrons and holes, which causes shorter carrier lifetime and lower open-circuit voltage (V OC ). Hence, in real devices, higher recombination rate occurs close to the interface of the sequentially deposited layers. For typical n-i-p perovskite solar cells (PSCs), the perovskite/hole transport layer (HTL) interface holds the high defect density, such as cation/anion vacancy and dangling bonds, etc., [7,8] resulting in defect-assisted recombination. Additionally, the energy level mis-alignment near the interface due to quasi-fermi level pinning will increase recombination velocity [9] and the recombination loss occurs inevitably across interfaces between holes in HTL and minority carriers (electron) in the perovskite, or HTL themselves. [10,11] These existing recombination loss channels at the surface/ interface of the perovskite will severely limit the V OC and overall efficiency of PSCs.Many studies have demonstrated that passivation is an efficient method to lessen the non-radiative recombination loss at the surface/interface of the perovskite in n-i-p PSCs. For example, excess PbI 2 [4,[12][13][14] was believed to passivate the grain boundaries and interface of electron transport layer with perovskite; conjugated polymers [15] and insulating poly(methyl methacrylate) [16,17] were also used to passivate the interface of perovskite/HTL. Recently, various ammonium halide compounds, [8,18,19] especially bulky organic ammonium halide salts were adopted to passivate the surface of perovskite, such as 1,8-octanediammonium iodide, [3] adamantylammonium hydroiodide, [7] (fluorine-)phenylethylammonium iodide (F-)PEAI, [20][21][22][23] n-hexyl trimethyl ammonium bromide, [24] etc. They could interact with the undercoordinated ions or form low-dimensional perovskite phases to passivate the surface/ interface of bulk perovskite. The stability of devices was also usually improved due to the suppression of ionic migration by the packed organic moiety or the formation of hydrophobic low-dimensional perovskites. [7,23,25] A very recent work by Jiang et al. found exceptionally that the insulating PEAI salt, rather than the 2D layered PEA 2 PbI 4 perovskite, served as a moreThe presence of non-radiative recombination at the perovskite surface/ interface limits the overall efficiency of perovskite solar cells (PSCs). Surface passivation has been demonstrated as an efficient strategy to suppress such recombination in Si cells. Here, 1-naphthylmethylamine iodide (NMAI) is judiciously selected to passivate the surface of the perovskite film. In contrast to the popular phenylethylammonium iodide, NMAI post-treatment primarily leaves NMAI sal...

show abstract

Section: Resultsmentioning

confidence: 99%

Efficient Perovskite Solar Cells by Reducing Interface‐Mediated Recombination: a Bulky Amine Approach

Liang

Luo

et al. 2020

Advanced Energy Materials

230

199

View full text Add to dashboard Cite

show abstract

“…Owing to the merits of low‐cost, nondestructive read‐out, good compatibility with flexible substrates, and easily integrated structure, nonvolatile organic field‐effect transistor (OFET) memory devices have attracted extensive attention for their potential applications as basic building blocks in a wide range of organic electronics such as radio frequency identification devices, sensors, flexible circuits, and displays . To date, much progress has been made in various types of OFET memory devices, such as floating‐gate OFET memory, polymer electret OFET memory, and ferroelectric OFET memory . However, OFET memory devices are far less mature than their Si counterparts; many issues remain regarding their charge storage capacity, stability, and reliability, limiting their practical applications.…”

mentioning

confidence: 99%

“…This is ascribed to a lack of mobile electrons in pentacene in the ambient condition. Previous studies demonstrated that light illumination could generate excitons in the semiconductor layer of OFET memory devices, which can assist the programming/erasing operation with or without external voltage bias . Therefore, in the erasing process we utilized a white light with light intensity of about 5 mW cm −2 to illuminate the memory device.…”

mentioning

confidence: 99%

“…Interestingly, the energy levels of the WG 3 NSs and the WG 3 film appear to be identical, which indicates the same tunneling barrier with pentacene; however, the memory performance of the WG 3 NSs device is far superior to that of the WG 3 film device. Compared to the WG 3 film, the WG 3 NSs have larger contact area with the pentacene film due to their nanocolumn‐like structures, which substantially increases the probability of charge tunneling from the semiconductor channel to the gate dielectric during electric‐programming process, and charge‐exciton annihilation at pentacene/WG 3 interface during light‐erasing process, leading to a remarkable improvement in charge trapping capacity and switching speed of the memory device . Moreover, the isolated WG 3 NSs structures can effectively suppress the lateral diffusion of the trapped holes among the WG 3 NSs, which enable memory device with high stability and reliability.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Solution‐Processed Wide‐Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field‐Effect Transistor Memory

Wen

Guo

Ling

et al. 2017

Small

Self Cite

View full text Add to dashboard Cite

In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG ) is reported. The WG NSs are prepared from phase separation by spin-coating blend solutions of WG /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG film, the device based on WG NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 s), and reliable switching properties. A quantitative study of the WG NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG NSs and pentacene layer. This versatile solution-processing approach to preparing WG NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials.

show abstract

“…While low temperature processed memory devices fabricated from polymers have been demonstrated as an alternative [2][3][4][5][6][7], their performance degrade rapidly after a few cycles of operation [8][9][10][11][12][13][14]. Moreover conventional memory devices need the support of tunneling and blocking layers since the memory dielectric or polymer is incapable of preventing memory leakage [15][16][17]. The main issue in designing a memory device is to optimize the leakage current and intrinsic trap density simultaneously [18].…”

mentioning

confidence: 99%

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Mondal

Venkataraman

2019

Nat Commun

View full text Add to dashboard Cite

Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is challenging to create intrinsic traps in the dielectric layer without high temperature processing steps. The main issue is to optimize the leakage current and intrinsic trap density simultaneously. Moreover, conventional memory devices need the support of tunneling and blocking layers since the charge trapping dielectric layer is incapable of preventing the memory leakage. Here we report a tunable flash memory device without tunneling and blocking layer by combining the discovery of high intrinsic charge traps of more than 10 12 cm −2 , together with low leakage current of less than 10 −7 A cm −2 in solution derived, inorganic, spin-coated dielectric films which were heated at 200 °C or below. In addition, the memory storage capacity is tuned systematically upto 96% by controlling the trap density with increasing heating temperature.

show abstract

The effect of porous structure of PMMA tunneling dielectric layer on the performance of nonvolatile floating-gate organic field-effect transistor memory devices

Cited by 47 publications

References 36 publications

Efficient Perovskite Solar Cells by Reducing Interface‐Mediated Recombination: a Bulky Amine Approach

Efficient Perovskite Solar Cells by Reducing Interface‐Mediated Recombination: a Bulky Amine Approach

Solution‐Processed Wide‐Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field‐Effect Transistor Memory

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Contact Info

Product

Resources

About