The Effect of Post-Annealing Temperature on the Performance of OTFT Memory

Abstract

A nonvolatile memory based on an organic thin-film transistor (OTFT) with biopolymer of DNA-OTMA as the gate dielectric is fabricated. The device prepared by DNA-OTMA show a very large and metastable hysteresis in the transfer characteristics. In order to obtain the organic thin film transistor memory device with high electronic performance, one of the most widely used method such as post annealing have been applied to improve the quality of gate dielectric layer. In conclusion, the post-annealing at elevated temperatures plays a very important role in the performance of the OTFT memory device.