The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector

Broadband photodetectors with a wide ultraviolet (UV)-visible (vis)-nearinfrared (NIR) spectral response reduce cost and form factors in smart sensing systems by using one rather than multiple devices for versatile applications. However, simultaneously achieving broadband detection, high responsivity, and fast response time remains challenging. This study demonstrates a highperformance broadband amorphous In-Ga-Zn-O (a-IGZO) phototransistor using an engineered Ni/Ti bilayer metal contact. This device differs drastically from the conventional a-IGZO phototransistors in several aspects: 1) Pronounced photoresponse occurs at the device ON-state rather than the OFF-state. 2) A broadband response of 385-980 nm rather than a narrowband UV response. 3) Fast sub-ms response time with no persistent photocurrent. 4) High responsivity of exceeding 10 5 A W −1 . The external quantum efficiency exceeding 10 7 % and specific detectivity exceeding 10 15 Jones are also among the best of any UV-vis-NIR broadband photodetectors. The photoresponse is attributed to the light-sensitive source-drain series resistance at the ON-state. The Ni diffusion during postmetal annealing induces photoactive subgap states and modulates the conductivity of a-IGZO at the contact region. The superior performance using low-temperature processes and simple device structures as the widely available a-IGZO technology suggests a tremendous application potential of this broadband phototransistor.

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Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor

Lai

Wang

Hou

2022

Adv Funct Materials

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Structural, magnetic, and magnetocaloric properties of (1 − x)La0.7Ca0.3MnO3/(x)La0.7Ag0.3MnO3 composites

Yigiter

Pektas

Kolat

et al. 2022

J Mater Sci: Mater Electron

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Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors

Huang,

Liu,

Tang

et al. 2024

IEEE Trans. Electron Devices

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The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector

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Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor

Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor

Structural, magnetic, and magnetocaloric properties of (1 − x)La0.7Ca0.3MnO3/(x)La0.7Ag0.3MnO3 composites

Physical Insight Into Multiple Gate-Voltage Dependencies of Off-State Photocurrent in Amorphous InZnO Thin-Film Transistors

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