“…[1][2][3][4][5][6][7][8][9] The absence of grain boundaries and lattice defects in amorphous oxides not only blocks vacancy-enhanced and short-circuit diffusion 1,8 but also improves the electronic properties (e.g., increased dielectric strength and lower leakage current) 2,4,7,8 and the corrosion resistance. 5,6 Due to their large amount of free volume and high bond flexibility, 1,3,9 amorphous oxide thin films are also more ductile than their (poly)crystalline counterparts, allowing their application on large and flexible substrates without brittle fracture. 9,10 For example, thin amorphous Al 2 O 3 (am-Al 2 O 3 ) oxide films are widely applied as a diffusion barrier for, for example, flexible microelectronic and photovoltaic devices.…”