The effect of precursor concentration and post-deposition annealing on the optical and micro-structural properties of SILAR deposited SnO₂ films

Abstract

Uniform and well-adherent SnO 2 thin films, with thickness ranging from 60 nm to 6 μm, were deposited on borosilicate glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) technique. A micro-controlled SILAR unit was employed to precisely monitor the deposition conditions. The effect of precursor concentration and post-deposition annealing on the micro-structural and optical properties of SnO 2 thin films were studied in detail. The films were found to possess tetragonal rutile structure. The crystallite size of the films increased with solution molarity. Microstructural properties were analyzed using Scherrer, Modified Scherrer, Williamsons-Hall and Size-Strain plot techniques. Different optical properties such as band gap, skin depth, extinction coefficient, Urbach energy etc were determined. The postdeposition annealing at a moderate temperature of 573 K was found to enhance the crystallite size of the films while the density of the defect energy states reduced.

Tin Oxide/Vertically Aligned Graphene Hybrid Electrodes Prepared by Sonication-Assisted Sequential Chemical Bath Deposition for High-Performance Supercapacitors

“…The excess Sn 4+ ions attached to the VAG surface were removed by rinsing with deionized water. The VAG electrode immersed in H 2 O 2 aqueous solution underwent a reaction as described in eq , resulting in amorphous SnO 2 nanoparticles on the surface . Similar to the previous step, the excess ions on the VAG surface were removed by rinsing with deionized water.…”

“…Figure illustrates the preparation of SnO 2 @VAG using the S-SCBD process. The VAG electrode was sequentially immersed in cationic and anionic precursor solutions for 30 s. When VAG was immersed in a cationic aqueous solution, the Sn 4+ ions in the cationic solution adhered to the VAG surface, following eq . The excess Sn 4+ ions attached to the VAG surface were removed by rinsing with deionized water.…”

“…The VAG electrode was sequentially immersed in cationic and anionic precursor solutions for 30 s. When VAG was immersed in a cationic aqueous solution, the Sn 4+ ions in the cationic solution adhered to the VAG surface, following eq 1 . 44 The excess Sn 4+ ions attached to the VAG surface were removed by rinsing with deionized water. The VAG electrode immersed in H 2 O 2 aqueous solution underwent a reaction as described in eq 2 , resulting in amorphous SnO 2 nanoparticles on the surface.…”

“…The VAG electrode immersed in H 2 O 2 aqueous solution underwent a reaction as described in eq 2 , resulting in amorphous SnO 2 nanoparticles on the surface. 44 Similar to the previous step, the excess ions on the VAG surface were removed by rinsing with deionized water. Repeated cycles of the S-SCBD process were applied to the VAG electrode, and a large number of amorphous SnO 2 nanoparticles uniformly attached to the VAG surface.…”

Thin Films Processed by SILAR Method

“…Hence, the MnCl 2 -derived Mn 3 O 4 electrode showed a good electrochemical with maximum energy density of 17 Whkg À1 and power density of 999 Wkg À1 at 0.5 mAcm À2 current density showing retention stability of 94% after 4500 CV cycles [160]. Besides, a study of SILAR-deposited SnO 2 films showed improvement of the crystallite with solution molarity performed by using different precursor concentration of both cations and anions [161].…”