The effect of rapid thermal annealing on the electrical characteristics of InP MOS structures with a double oxide layer

Abstract

The electrical properties of double oxide layer InP MOS structures are analyzed. The first oxide layer (next to InP) is anodized and the second oxide layer is RF magnetron sputtered SiO2. The quality of as‐deposited oxide structures is not good. However, it is improved after rapid thermal annealing. The resistivity and breakdown electric field increase. The current conduction process and InP surface potential change after annealing. The oxide fixed charge density also decreases after annealing. Sputter created defects and partial removal of defects after annealing and changes in their distribution are used to explain the observations.