The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

Kaabi, L.; Remaki, B.; Gontrand, C.; Lo, P.F.; Balland, B.

doi:10.1016/b978-0-444-82410-3.50046-1

Ion Beam Processing of Materials and Deposition Processes of Protective Coatings 1996

DOI: 10.1016/b978-0-444-82410-3.50046-1

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The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

L. Kaabi

B. Remaki

C. Gontrand

et al.

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The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

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References 19 publications

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